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参数资料
型号： M392T5160CJA-CCC
元件分类： DRAM
英文描述： 512M X 72 DDR DRAM MODULE, 0.6 ns, DMA240
封装： DIMM-240
文件页数： 25/30页
文件大小： 718K
代理商： M392T5160CJA-CCC
Rev. 1.3 July 2007
RDIMM
DDR2 SDRAM
4 of 30
1.0 DDR2 Registered DIMM Ordering Information
Note :
1. “Z” of Part number(11th digit) stand for Lead-free products. and "J" of Part number(11th digit) stand for dual-die package products.
2. “3” of Part number(12th digit) stand for Non-parity Register products. and "A" of Part number(12th digit) stand for Parity Register products.
3. "92" of Part number(3~4th digit) stand for VLP(Very Low Profile) Register products.
Part Number
Density
Organization
Component Composition
Number of Rank
Parity Register
Height
M392T2863CZA-CF7/E6/D5/CC
1GB
128Mx72
128Mx8(K4T1G084QC)*9EA
1
O
18.30mm
M393T5663CZ3-CD5/CC
2GB
256Mx72
128Mx8(K4T1G084QC)*18EA
2
X
30.00mm
M393T5663CZA-CF7/E6
2GB
256Mx72
128Mx8(K4T1G084QC)*18EA
2
O
30.00mm
M392T5663CZA-CF7/E6/D5/CC
2GB
256Mx72
128Mx8(K4T1G084QC)*18EA
2
O
18.30mm
M393T5660CZ3-CD5/CC
2GB
256Mx72
256Mx4(K4T1G044QC)*18EA
1
X
30.00mm
M393T5660CZA-CF7/E6
2GB
256Mx72
256Mx4(K4T1G044QC)*18EA
1
O
30.00mm
M392T5660CZA-CF7/E6/D5/CC
2GB
256Mx72
256Mx4(K4T1G044QC)*18EA
1
O
18.30mm
M393T5160CZ3-CD5/CC
4GB
512Mx72
256Mx4(K4T1G044QC)*36EA
2
X
30.00mm
M393T5160CZA-CF7/E6
4GB
512Mx72
256Mx4(K4T1G044QC)*36EA
2
O
30.00mm
M392T5160CJA-CE6/D5/CC
4GB
512Mx72
DDP512Mx4(K4T2G044QC)*18EA
2
O
18.30mm
M393T1G60CJ3-CD5/CC
8GB
1Gx72
DDP512Mx4(K4T1G044QC)*36EA
4
X
30.00mm
M393T1G60CJA-CE6/CD5/CC
8GB
1Gx72
DDP512Mx4(K4T1G044QC)*36EA
4
O
30.00mm
Organization
Row Address
Column Address
Bank Address
Auto Precharge
256Mx4(1Gb) based Module
A0-A13
A0-A9, A11
BA0-BA2
A10
128Mx8(1Gb) based Module
A0-A13
A0-A9
BA0-BA2
A10
Performance range
JEDEC standard 1.8V ± 0.1V Power Supply
VDDQ = 1.8V ± 0.1V
200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
8 Banks
Posted CAS
Programmable CAS Latency: 3, 4, 5, 6
Programmable Additive Latency: 0, 1 , 2 , 3, 4 and 5
Write Latency(WL) = Read Latency(RL) -1
Burst Length: 4 , 8(Interleave/nibble sequential)
Programmable Sequential / Interleave Burst Mode
Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
Off-Chip Driver(OCD) Impedance Adjustment
On Die Termination with selectable values(50/75/150 ohms or disable)
PASR(Partial Array Self Refresh)
Average Refresh Period 7.8us at lower than a TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C
- support High Temperature Self-Refresh rate enable feature
Serial presence detect with EEPROM
DDR2 SDRAM Package: 60ball FBGA - 128Mx4/64Mx8
All of Lead-free products are compliant for RoHS
Note: For detailed DDR2 SDRAM operation, please refer to Samsung’s Device operation & Timing diagram.
F7(DDR2-800)
E6(DDR2-667)
D5(DDR2-533)
CC(DDR2-400)
Unit
Speed@CL3
-
400
Mbps
Speed@CL4
533
400
Mbps
Speed@CL5
667
-
Mbps
Speed@CL6
800
-
Mbps
CL-tRCD-tRP
6-6-6
5-5-5
4-4-4
3-3-3
CK
2.0 Features
3.0 Address Configuration
相关PDF资料
PDF描述
M3933/14-02N 0 MHz - 12400 MHz RF/MICROWAVE FIXED ATTENUATOR
MIL-A-3933/14-02 0 MHz - 12400 MHz RF/MICROWAVE FIXED ATTENUATOR
MIL-A-3933/14-14 0 MHz - 12400 MHz RF/MICROWAVE FIXED ATTENUATOR
M3933/14-18S 0 MHz - 12400 MHz RF/MICROWAVE FIXED ATTENUATOR
MIL-A-3933/14-17 0 MHz - 12400 MHz RF/MICROWAVE FIXED ATTENUATOR
相关代理商/技术参数
参数描述
M392T5160CJA-CF7 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Registered SDRAM MODULE
M392T5160QJMA 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 SDRAM Memory
M392T5660FBA 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 SDRAM Memory
M392T5660QZHA 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 SDRAM Memory
M392T5663FBA 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 SDRAM Memory
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