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| 型号： | M392T5160CJA-CCC |
| 元件分类： | DRAM |
| 英文描述： | 512M X 72 DDR DRAM MODULE, 0.6 ns, DMA240 |
| 封装： | DIMM-240 |
| 文件页数： | 7/30页 |
| 文件大小： | 718K |
| 代理商： | M392T5160CJA-CCC |
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Rev. 1.3 July 2007
RDIMM
DDR2 SDRAM
15 of 30
(IDD values are for full operating range of Voltage and Temperature)
Symbol
Proposed Conditions
Units
Note
IDD0
Operating one bank active-precharge current;
tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD); CKE is HIGH, CS\ is HIGH between valid commands;
Address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
IDD1
Operating one bank active-read-precharge current;
IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD =
tRCD(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern
is same as IDD4W
mA
IDD2P
Precharge power-down current;
All banks idle; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are
FLOATING
mA
IDD2Q
Precharge quiet standby current;
All banks idle; tCK = tCK(IDD); CKE is HIGH, CS\ is HIGH; Other control and address bus inputs are STABLE; Data
bus inputs are FLOATING
mA
IDD2N
Precharge standby current;
All banks idle; tCK = tCK(IDD); CKE is HIGH, CS\ is HIGH; Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
mA
IDD3P
Active power-down current;
All banks open; tCK = tCK(IDD); CKE is LOW; Other control and address
bus inputs are STABLE; Data bus inputs are FLOATING
Fast PDN Exit MRS(12) = 0mA
mA
Slow PDN Exit MRS(12) = 1mA
mA
IDD3N
Active standby current;
All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS\ is HIGH between valid
commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
IDD4W
Operating burst write current;
All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP
= tRP(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus
inputs are SWITCHING
mA
IDD4R
Operating burst read current;
All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRAS-
max(IDD), tRP = tRP(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are SWITCH-
ING; Data pattern is same as IDD4W
mA
IDD5B
Burst auto refresh current;
tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS\ is HIGH between valid commands;
Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
IDD6
Self refresh current;
CK and CK\ at 0V; CKE
≤ 0.2V; Other control and address bus inputs are
FLOATING; Data bus inputs are FLOATING
Normal
mA
Low Power
mA
IDD7
Operating bank interleave read current;
All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC =
tRC(IDD), tRRD = tRRD(IDD), tFAW = tFAW(IDD), tRCD = 1*tCK(IDD); CKE is HIGH, CS\ is HIGH between valid
commands; Address bus inputs are STABLE during DESELECTs; Data pattern is same as IDD4R; Refer to the fol-
lowing page for detailed timing conditions
mA
10.0 IDD Specification Parameters Definition
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相关代理商/技术参数 |
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| M392T5160CJA-CF7 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 Registered SDRAM MODULE |
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| M392T5660FBA | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 SDRAM Memory |
| M392T5660QZHA | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 SDRAM Memory |
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