参数资料
型号: MA4P606-36
元件分类: 参考电压二极管
英文描述: SILICON, PIN DIODE
封装: HERMETIC SEALED PACKAGE-2
文件页数: 1/7页
文件大小: 365K
代理商: MA4P606-36
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)) or
information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Packaged PIN Diodes
RoHS Compliant
Rev V.6
Features
High Power
Fast Speed
Voltage Ratings to 1500 Volts
Wide Selection of Carrier Lifetimes
Wide Selection of Capacitances
Assortment of Packages Styles
Available Screened for Military Applications
Description and Applications
M/A-COM's broad line of packaged PIN diodes
encompasses a comprehensive range of electrical
characteristics and package outlines. This diverse union
of semiconductor technology and chip packaging gives
considerable flexibility to the circuit designer. The fast
switching series of packaged PIN diodes utilize a thin
I-region and silicon oxide or glass passivated chips
which provide for low leakage currents and low insertion
loss. Using in process control monitors to regulate wafer
fabrication parameters these devices achieve consistent
performance in control circuit applications. The high
voltage product line of packaged PIN diodes employs
M/A-COM's unique CERMACHIP
passivation process
which provides for a hard glass encapsulation that
hermetically seals the active area of the chip. These
packaged CERMACHIP
PIN diodes are ideally suited
for use in high power applications where high RF
voltages are present. The diode chips are bonded into
sealed ceramic packages that are designed for the most
stringent electrical and environmental conditions. A wide
choice of packages are available which can be mounted
into a variety of microwave and RF circuit media. The
Packaged PIN Diodes series are designed to have a
high inherent reliability and may be ordered screened to
meet many MIL-STD reliability levels.
Absolute Maximum Ratings1
1. Operation beyond any one of the above conditions may
cause permanent damage to the device.
Cathode Heatsink Packages
30,31,32,36,43,94,111,120,150,255
258,296,1072,1079
Pdiss =
T (max Operating)-25°C
Thermal Resistance
Leaded Packages
@+25°C
186, 276,1088
Pdiss = 250mW
Surface Mount Package
+25°C
1056
Pdiss = 300mW
Maximum Power Dissipation
Co-Axial Packages
Surface Mount Packages
Threaded Packages
Specifications subject to change without prior notification.
Unpackaged Die
Parameter
Absolution Max.
Voltage
As Specified in Table
Operating Temperature
- 65°C to +175°C
Storage Temperature
- 65°C to +200°C
Operating and Storage
(Case Style 1088)
- 65°C to +125°C
31,32,94
36
1056
120,255
276
186
30, 296
1088
1072,1079
150
111
43
258
131,132.134 , 212
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