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参数资料
| 型号： | MA4P606-36 |
| 元件分类： | 参考电压二极管 |
| 英文描述： | SILICON, PIN DIODE |
| 封装： | HERMETIC SEALED PACKAGE-2 |
| 文件页数： | 3/7页 |
| 文件大小： | 365K |
| 代理商： | MA4P606-36 |
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)) or
information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Packaged PIN Diodes
RoHS Compliant
Rev V.6
Specifications subject to change without prior notification
.
Part Number
Minimum
Reverse
Voltage1
IR <10μA
Volts
Maximum
Capacitance
CT @100V
f = 1MHz
pF
Maximum
Series
Resistance
RS @100mA
f = 100MHz
Ω
CW Power
Dissipation
Rating
Watts
Nominal Characteristics
Carrier
Lifetime2
μS
I-Region
Width
mils
MA4P504-30
500
0.40
0.60
20
1.0
2
MADP000015-000030 3
500
0.55
0.45
15
2.0
2
MA4P506-30
500
0.90
0.30
10
3.0
2
500 Volt PIN Diodes Specifications (TAMB = +25°C)
500 Volt MELF PIN Diode Specifications (TAMB = +25°C)
Part Number
Minimum
Reverse
Voltage1
IR <10μA
Volts
Maximum
Capacitance
CT @100V
f = 1MHz
pF
Maximum
Series
Resistance
RS @100mA
f = 100MHz
Ω
CW Power
Dissipation
Rating
Watts
Nominal Characteristics
Carrier
Lifetime2
μS
I-Region
Width
mils
MA4P504-1072T
500
0.5
0.60
1.5
1.0
2
MA4P505-1072T
500
0.65
0.45
1.5
2.0
2
MA4P506-1072T
500
1.0
0.30
1.5
3.0
2
1072 Package
Notes:
1. The minimum specified VR (Reverse Voltage) is sourced and the resultant reverse leakage
current, Ir, is measured to be <10μA.
2. Nominal carrier life time specified with diode biased at IF = +10mA , IREV = -6mA
Notes:
1. The minimum specified VR (Reverse Voltage ) is sourced and the resultant reverse leakage current, Ir, is measured to be <10μA.
2. Nominal carrier life time specified with diode biased at IF = +10mA , IREV = -6mA
3. To order this part in a package other than 30, use the prefix MA4P505 followed by a dash and the desired package style. Check for
available packages in the Package Availability Table on page 7 of the datasheet.
31
36
111
258
131,132
30
Package dimensions can be found on the M/A-COM website at
http://www.macom.com/TechApps/OutlineDrawings.asp
Alternative Packages
Consult the Package Availability Table in the “Ordering Information” section (pg. 7) for options
120,255
186
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