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参数资料
| 型号： | MA4P606-36 |
| 元件分类： | 参考电压二极管 |
| 英文描述： | SILICON, PIN DIODE |
| 封装： | HERMETIC SEALED PACKAGE-2 |
| 文件页数： | 4/7页 |
| 文件大小： | 365K |
| 代理商： | MA4P606-36 |
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)) or
information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Packaged PIN Diodes
RoHS Compliant
Rev V.6
Part Number
Minimum
Reverse
Voltage1
IR <10μA
Volts
Maximum
Capacitance
CT @100V
f = 1MHz
pF
Maximum
Series
Resistance
Rs @100mA
f = 100MHz
Ω
CW Power
Dissipation
Rating
Watts
Nominal Characteristics
Carrier
Lifetime2
μS
I-Region
Width
Mils
MA4P604-30
1000
0.50
1.00
20
3.0
4
MA4P606-30
1000
0.80
0.70
10
4.0
4
MA4P607-43
1000
2.00
0.40
7
5.0
4
1000 Volt CERMACHIP PIN Diodes Specification (TAMB = +25°C)
Part Number
Minimum
Reverse
Voltage1
IR <10μA
Volts
Maximum
Capacitance
Ct @100V
f = 1MHz
pF
Maximum Series
Resistance
Rs @200mA
f = 100MHz
Ω
Maximum
Thermal
Resistance
°C/W
Nominal Characteristics
Carrier
Lifetime2
μS
I-Region
Width
mils
MA4P709-150
1500
3.30
0.25
2
10.0
7
1500 Volt CERMACHIP PIN Diode Specifications (TAMB = +25°C)
150
Notes:
1. The maximum specified VR (reverse voltage) is sourced and the resultant reverse leakage
current, Ir, is measured to be <10μA
2. Nominal carrier life time specified with diode biased at IF = +10mA , IREV = -6mA
Notes:
1. The minimum specified VR (reverse voltage) is sourced and the resultant reverse
leakage current, Ir, is measured to be <10μA
2. Nominal carrier life time specified with diode biased at IF = +10mA , IREV = -6mA
Specifications subject to change without prior notification.
43
131
30
36
111
255
258
Optional Packages
Consult table in “Ordering Information” section (pg. 7) for availability
Package dimensions can be found on the M/A-COM website at
http://www.macom.com/TechApps/OutlineDrawings.asp
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相关代理商/技术参数 |
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| MA4P607-210 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:PIN Diode Chips |
| MA4P607-212 | 制造商:M/A-COM Technology Solutions 功能描述:RF PIN DIODE |
| MA4P607-43 | 制造商:M/A-COM Technology Solutions 功能描述:RF PIN DIODE |
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