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参数资料
| 型号： | MA4P606-36 |
| 元件分类： | 参考电压二极管 |
| 英文描述： | SILICON, PIN DIODE |
| 封装： | HERMETIC SEALED PACKAGE-2 |
| 文件页数： | 2/7页 |
| 文件大小： | 365K |
| 代理商： | MA4P606-36 |
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)) or
information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Packaged PIN Diodes
RoHS Compliant
Rev V.6
Part Number
Minimum
Reverse
Voltage1
@ IR <10μA
Volts
( Unless otherwise
specified )
Maximum
Capacitance
CT @ -10V
f = 1MHz
pF
( Unless otherwise
specified )
Maximum
Series Res.
RS @ 10mA
f = 500MHz
Ω
Maximum
Thermal
Resistance
°C/W
Nominal Characteristics
Carrier
Lifetime4
nS
TRR
5
nS
I-Region
Width
Microns
M
MA4P203-30
100
0.35
1.50
30
100
20
12
MA4P303-32
200
0.35
1.50
30
200
60
20
MA4P404-30
250
0.40 2
0.60 3
20
1000
100
30
MA4P202-120
100
0.25
2.50
60
5
12
35 to 250 Volt Fast Switching PIN Diodes Specifications (TAMB = +25°C)
Part Number1
Minimum
Reverse
Voltage2
IR <10μA
Volts
Maximum
Capacitance
CT @10V
f = 1MHz
pF
(Unless otherwise
specified)
Maximum
Series Res.
RS @10mA
f = 100MHz
Ω
CW Power
Dissipation
Rating
Watts
Nominal Characteristics
Typical IF
When
RS = 75Ω
mA
Carrier
Lifetime3
μS
I-Region
Width
mils
MA4PH235-1072T
35
1.2
0.5
1.0
—
0.3
0.4
MA4PH236-1072T
200
0.5
3.0
1.0
—
1.5
2.0
MA4PH237-1079T
200
1.5
0.6 4
2.0
—
3.0
MA4PH238-1072T
200
0.5
6.0
1.0
0.30-0.60
2.0
4.0
MA4PH239-1079T
200
0.8
25.0 @ 10mA
2.0
1.20-2.40
6.0
14.0
35 to 200V MELF General Purpose Switching Diodes Specifications (TAMB = +25°C)
Notes:
1. The minimum specified VR (Reverse Voltage) is sourced and the resultant reverse leakage current, Ir, is measured to be <10μA
2. At VR = -50V
3. Rs measured at IF = +50mA, f = 100MHz.
4. Nominal carrier life time specified with diode biased at IF = +10mA , IREV = -6mA
5. Nominal TRR (reverse recovery time) specified with diode biased at IF = +20mA , IREV = -200mA.
Case Styles 1072, 1079
Notes:
1. Only available in case styles indicated.
2. The minimum specified VR (Reverse Voltage) is sourced and the resultant reverse
leakage current, Ir, is measured to be <10μA.
3. Nominal carrier life time specified with diode biased at IF = +10mA , IREV = -6mA
4. Rs measured at IF = 50mA, f = 100MHz.
Package dimensions can be found on the M/A-COM website at
http://www.macom.com/TechApps/OutlineDrawings.asp
Alternative Packages
Consult the Package Availability Table in the “Ordering Information” section (pg. 7) for options
3
31,32,
111
120, 255
186
276
1088
1056
134,132
Chip
1072
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