型号: | MAPLST1900-060CF |
元件分类: | 功率晶体管 |
英文描述: | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
文件页数: | 2/5页 |
文件大小: | 233K |
代理商: | MAPLST1900-060CF |
相关PDF资料 |
PDF描述 |
---|---|
MAPLST1920-030WF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
MAPRST0912-50 | L BAND, Si, NPN, RF POWER TRANSISTOR |
MAT-01GH/883 | 25 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
MAT03-903H | SMALL SIGNAL TRANSISTOR |
MAT03-913L | SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
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MAPLST2122-015CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 15W, 28V |
MAPLST2122-030CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:LDMOS RF Line Power FET Transistor 30 W , 2110-2170 MHz, 28V |
MAPLST2122-060CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V |
MAPLST2122-090CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V |
MAPM-020512-010C00 | 功能描述:射频MOSFET电源晶体管 20-512MHz Gain:25dB VSWR:3:1 -40c to 85C RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |