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参数资料
| 型号： | MAPLST1900-060CF |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 3/5页 |
| 文件大小： | 233K |
| 代理商： | MAPLST1900-060CF |
RF Power LDMOS Transistor, 1890 — 1925 MHz, 60W, 26V
MAPLST1900-060CF
10/31/03
Preliminary
Figure 1. 1890—1925 MHz Test Fixture Schematic
Figure 2. 1890—1925 MHz Test Fixture Component Layout
3
C1,C7
Electrolytic Surface Mt. Cap., 100 F, 35 V
C2,C8
Ceramic Chip Capacitor, 0.1 F
C3,C9
Ceramic Chip Capacitor, 1000 pF
C4,C5,C10,C15
Chip Capacitor, 8.2 pF ATC100B
C6
Chip Capacitor, 0.5 pF ATC100B
C11,C12 Chip Capacitor, 2.0 pF ATC100B
C14
Chip Capacitor, 1.5 pF ATC100B
J1,J2
SMA Connector, Omni Spectra 2052-5636-02
L1,L2
Inductor, 8 nH, CoilCraft A03T
L3
Inductor, 18.5 nH, CoilCraft A05T
P1,P2
Connector, AMP 640457-4
Q1
Transistor, MAPLST1900-060CF
R1
Chip Resistor (0805), 100 Ohm
Z1
Distributed Microstrip Element, 0.200” x 0.088”
Z2
Distributed Microstrip Element, 0.250” x 0.237”
Z3
Distributed Microstrip Element, 0.340” x 0.237”
Z4
Distributed Microstrip Element, 0.340” x 0.237”
Z5
Distributed Microstrip Element, 0.400” x 0.540”
Z6
Distributed Microstrip Element, 0.695” x 0.620”
Z7
Distributed Microstrip Element, 0.243” x 0.620”
Z8
Distributed Microstrip Element, 0.243” x 0.620”
Z9
Distributed Microstrip Element, 0.450” x 0.085”
Z10
Distributed Microstrip Element, 0.450” x 0.085”
Z11
Distributed Microstrip Element, 0.250” x 0.085”
PC Board (74350144-01), Arlon Woven Glass
Teflon .030” Thick, Er=2.54, 2 Oz Copper
Both Sides
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAPLST2122-015CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 15W, 28V |
| MAPLST2122-030CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:LDMOS RF Line Power FET Transistor 30 W , 2110-2170 MHz, 28V |
| MAPLST2122-060CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V |
| MAPLST2122-090CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V |
| MAPM-020512-010C00 | 功能描述:射频MOSFET电源晶体管 20-512MHz Gain:25dB VSWR:3:1 -40c to 85C RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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