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参数资料
| 型号： | MAPLST1900-060CF |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 4/5页 |
| 文件大小： | 233K |
| 代理商： | MAPLST1900-060CF |
RF Power LDMOS Transistor, 1890 — 1925 MHz, 60W, 26V
MAPLST1900-060CF
10/31/03
Preliminary
4
Graph 1. PHS: Power Gain and Drain Efficiency vs. Output Power
Graph 2. PHS: Adjacent Channel Power Ratio vs. Output Power
4
26Vdc, 1905.05 MHz, 600kHz Offset
-75
-73
-71
-69
-67
-65
-63
-61
33
34
35
36
37
38
39
40
41
42
43
POUT-avg. (dBm)
ACPR
(dBc)
450mA
500mA
550mA
26Vdc, 1905.05 MHz, IDQ=550mA
11.0
11.5
12.0
12.5
13.0
13.5
14.0
33
34
35
36
37
38
39
40
41
42
43
POUT (dBm)
Gain
(dB)
5
10
15
20
25
30
35
Gain
Efficiency
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAPLST2122-015CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 15W, 28V |
| MAPLST2122-030CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:LDMOS RF Line Power FET Transistor 30 W , 2110-2170 MHz, 28V |
| MAPLST2122-060CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V |
| MAPLST2122-090CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V |
| MAPM-020512-010C00 | 功能描述:射频MOSFET电源晶体管 20-512MHz Gain:25dB VSWR:3:1 -40c to 85C RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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