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| 型号： | MAX16955AUE/V+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 22/26页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM CM 16TSSOP |
| 其它有关文件： | Automotive Product Guide |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 96 |
| PWM 型： | 电流模式 |
| 输出数： | 1 |
| 频率 - 最大： | 1MHz |
| 电源电压： | 3.5 V ~ 36 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 16-TSSOP（0.173"，4.40mm）裸露焊盘 |
| 包装： | 管件 |
MAX16955
36V, 1MHz Step-Down Controller
with Low Operating Current
Both n-channel MOSFETs must be logic-level types
with guaranteed on-resistance specifications at V GS =
4.5V. Ensure that the conduction losses at minimum
input voltage do not exceed MOSFET package thermal
limits or violate the overall thermal budget. Also, ensure
Should this value be lower than the ideal capacitance
and assuming that the minimum bootstrap capacitor
should be large enough to supply 2V (typ) effective
gate voltage:
that the conduction losses, plus switching losses at the
maximum input voltage, do not exceed package ratings
or violate the overall thermal budget. The MAX16955’s
C BST ( MIN ) =
Q G
V BIAS ( MIN ) ? V TH ( TYP ) ? 2 V
DL gate driver must drive the low-side MOSFET (NL). In
particular, check that the dV/dt caused by the high-side
MOSFET (NH) turning on does not pull up the NL gate
through its drain-to-gate capacitance. This is the most
frequent cause of cross-conduction problems.
Gate-charge losses are dissipated by the driver and do
not heat the MOSFET. Therefore, if the drive current is
taken from the internal LDO regulator, the power dissi-
pation due to drive losses must be checked. Both
MOSFETs must be selected so that their total gate
charge is low enough; therefore, BIAS can power both
drivers without overheating the IC:
P DRIVE = (V SUP - V BIAS ) × Q G_TOTAL × f SW
where Q G_TOTAL is the sum of the gate charges of both
MOSFETs.
Boost-Flying Capacitor Selection
The bootstrap capacitor stores the gate voltage for the
internal switch. Its size is constrained by the switching
frequency and the gate charge of the high-side
MOSFET. Ideally the bootstrap capacitance should be
at least nine times the gate capacitance:
Should the minimum value still be too large to be
recharged sufficiently, a parallel bootstrap Schottky
diode may be necessary.
Power Dissipation
The MAX16955’s maximum power dissipation depends
on the thermal resistance from the die to the ambient
environment and the ambient temperature. The thermal
resistance depends on the device package, PCB cop-
per area, other thermal mass, and airflow.
The device’s power dissipation depends on the internal
linear regulator current consumption (P LIN ) and the
dynamic gate current (P GATE ):
P T = P LIN + P GATE
Linear power is the average bias current times the volt-
age drop from V SUP to V BIAS :
P LIN = I BIAS,AV × (V SUP - V BIAS )
where I BIAS,AV = I SUP(MAX) + f SW × (Q G_DH(MAX) +
Q G_DL(MAX) ), I SUP(MAX) is 2mA, f SW is the switching
C BST ( TYP ) = 9 ×
Q G
V BIAS
frequency programmed at FOSC, and Q G_ is the MOS-
FET data sheet’s total gate-charge specification limits
at V GS = 5V.
This results in a 10% voltage drop when the gate is
driven. However, if this value becomes too large to be
recharged during the minimum off-time, a smaller
Dynamic power is the average power during charging
and discharging of both the external gates per period
of oscillation:
capacitor must be chosen.
During recharge, the internal bootstrap switch acts as a
resistor, resulting in an RC circuit with the associated
time constants. Two τ s (time constants) are necessary
to charge from 90% to 99%. The maximum allowable
where:
P GATE = 2 ×
V 2 BIAS
R HS / LS
× t G , RISE × f SW
capacitance is, therefore:
C BST ( MAX ) =
t OFF ( MIN )
2 × R BST ( MAX )
2 ×
V 2 BIAS
R HS / LS
× t G , RISE ≈ 0 . 2 × 10 ? 6
W
Hz
is the frequency-dependent power, dissipated during
When in dropout, t OFF(MIN) is the minimum on-time of
the low-side switch and is approximately half the clock
period. When not in dropout, t OFF(MIN) = 1 - D MAX .
22
one turn-on and turn-off cycle of each of the external
n-channel MOSFETs. R HS/LS is the on-resistance of the
NH and NL.
Maxim Integrated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX16955EVKIT# | 功能描述:电源管理IC开发工具 MAX16955 Eval Kit RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| MAX16955EVKIT+ | 功能描述:电源管理IC开发工具 MAX16955 Eval Kit RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| MAX16956AUBA/V+T | 制造商:Maxim Integrated Products 功能描述:36V, 300MA, MINI BUCK CONVERTER WITH 2UA IQ - Tape and Reel |
| MAX16958GEE/V+ | 功能描述:模数转换器 - ADC 500mA Hi-Speed USB Protector RoHS:否 制造商:Texas Instruments 通道数量:2 结构:Sigma-Delta 转换速率:125 SPs to 8 KSPs 分辨率:24 bit 输入类型:Differential 信噪比:107 dB 接口类型:SPI 工作电源电压:1.7 V to 3.6 V, 2.7 V to 5.25 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-32 |
| MAX16958GEE/V+T | 功能描述:模数转换器 - ADC 500mA Hi-Speed USB Protector RoHS:否 制造商:Texas Instruments 通道数量:2 结构:Sigma-Delta 转换速率:125 SPs to 8 KSPs 分辨率:24 bit 输入类型:Differential 信噪比:107 dB 接口类型:SPI 工作电源电压:1.7 V to 3.6 V, 2.7 V to 5.25 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-32 |
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