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参数资料
| 型号： | MAX5064BATC+T |
| 厂商： | Maxim Integrated |
| 文件页数： | 10/20页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER 12-TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 配置： | 半桥 |
| 输入类型： | 差分 |
| 延迟时间： | 35ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 125V |
| 电源电压： | 8 V ~ 12.6 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 12-WQFN 裸露焊盘 |
| 供应商设备封装： | 12-TQFN-EP（4x4） |
| 包装： | 带卷 (TR) |
125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
R BBM = 10 k ? × ? BBM ? 1 ? for R BBM < 200 k ?
Undervoltage Lockout
Both the high- and low-side drivers feature undervolt-
age lockout (UVLO). The low-side driver’s UVLO LOW
threshold is referenced to GND and pulls both driver
outputs low when V DD falls below 6.8V. The high-side
driver has its own undervoltage lockout threshold
(UVLO HIGH ), referenced to HS, and pulls DH low when
BST falls below 6.4V with respect to HS.
During turn-on, once V DD rises above its UVLO thresh-
old, DL starts switching and follows the IN_L logic input.
At this time, the bootstrap capacitor is not charged and
the BST-to-HS voltage is below UVLO BST . For synchro-
nous buck and half-bridge converter topologies, the
bootstrap capacitor can charge up in one cycle and
normal operation begins in a few microseconds after the
BST-to-HS voltage exceeds UVLO BST . In the two-switch
forward topology, the BST capacitor takes some time (a
few hundred microseconds) to charge and increase its
voltage above UVLO BST .
The typical hysteresis for both UVLO thresholds is 0.5V.
The bootstrap capacitor value should be selected care-
fully to avoid unintentional oscillations during turn-on
and turn-off at the DH output. Choose the capacitor
value about 20 times higher than the total gate capaci-
tance of the MOSFET. Use a low-ESR-type X7R dielec-
tric ceramic capacitor at BST (typically a 0.1μF ceramic
is adequate) and a parallel combination of 1μF and
0.1μF ceramic capacitors from V DD to GND
(MAX5062_, MAX5063_) or to PGND (MAX5064_). The
high-side MOSFET’s continuous on-time is limited due
to the charge loss from the high-side driver’s quiescent
current. The maximum on-time is dependent on the size
of C BST , I BST (50μA max), and UVLO BST .
Output Driver
The MAX5062/MAX5063/MAX5064 have low 2.5 ?
R DS_ON p-channel and n-channel devices (totem pole)
in the output stage. This allows for a fast turn-on and
turn-off of the high gate-charge switching MOSFETs.
The peak source and sink current is typically 2A.
Propagation delays from the logic inputs to the driver
outputs are matched to within 8ns. The internal p- and
n-channel MOSFETs have a 1ns break-before-make
logic to avoid any cross conduction between them. This
internal break-before-make logic eliminates shoot-
through currents reducing the operating supply current
as well as the spikes at V DD . The DL voltage is approxi-
mately equal to V DD and the DH-to-HS voltage, a diode
drop below V DD , when they are in a high state and to
zero when in a low state. The driver R DS_ON is lower at
higher V DD . Lower R DS_ON means higher source and
sink currents and faster switching speeds.
Internal Bootstrap Diode
An internal diode connects from V DD to BST and is
used in conjunction with a bootstrap capacitor external-
ly connected between BST and HS. The diode charges
the capacitor from V DD when the DL low-side switch is
on and isolates V DD when HS is pulled high as the high-
side driver turns on (see the Typical Operating Circuit ).
The internal bootstrap diode has a typical forward volt-
age drop of 0.9V and has a 10ns typical turn-off/turn-on
time. For lower voltage drops from V DD to BST, connect
an external Schottky diode between V DD and BST.
Programmable Break-Before-Make
(MAX5064)
Half-bridge and synchronous buck topologies require
that the high- or low-side switch be turned off before
the other switch is turned on to avoid shoot-through
currents. Shoot-through occurs when both high- and
low-side switches are on at the same time. This condi-
tion is caused by the mismatch in the propagation
delay from IN_H/IN_L to DH/DL, driver output imped-
ance, and the MOSFET gate capacitance. Shoot-
through currents increase power dissipation, radiate
EMI, and can be catastrophic, especially with high
input voltages.
The MAX5064 offers a break-before-make (BBM) fea-
ture that allows the adjustment of the delay from the
input to the output of each driver. The propagation
delay from the rising edges of IN_H and IN_L to the ris-
ing edges of DH and DL, respectively, can be pro-
grammed from 16ns to 95ns. Note that the BBM time
(t BBM ) has a higher percentage error at lower value
because of the fixed comparator delay in the BBM
block. The propagation delay mismatch (t MATCH_ )
needs to be included when calculating the total t BBM
error. The low 8ns (maximum) delay mismatch reduces
the total t BBM variation. Use the following equations to
calculate R BBM for the required BBM time and
t BBM_ERROR :
? t ?
? 8 ns ?
t BBM _ ERROR = 0 . 15 × t BBM + t MATCH _
where t BBM is in nanoseconds.
The voltage at BBM is regulated to 1.3V. The BBM circuit
adjusts t BBM depending on the current drawn by R BBM .
Bypass BBM to AGND with a 1nF or smaller ceramic
capacitor (C BBM ) to avoid any effect of ground bounce
caused during switching. The charging time of C BBM
does not affect t BBM at turn-on because the BBM voltage
is stabilized before the UVLO clears the device turn-on.
10
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