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参数资料
| 型号： | MAX5064BATC+T |
| 厂商： | Maxim Integrated |
| 文件页数： | 8/20页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER 12-TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 配置： | 半桥 |
| 输入类型： | 差分 |
| 延迟时间： | 35ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 125V |
| 电源电压： | 8 V ~ 12.6 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 12-WQFN 裸露焊盘 |
| 供应商设备封装： | 12-TQFN-EP（4x4） |
| 包装： | 带卷 (TR) |
125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
MAX5062/MAX5063 Pin Description
PIN
1
2
3
4
5
6
7
8
—
PIN
1
2
3
4
5
6
7
8
9
10
11
12
—
NAME
V DD
BST
DH
HS
IN_H
IN_L
GND
DL
EP
NAME
BST
DH
HS
AGND
BBM
IN_H-
IN_H+
IN_L-
IN_L+
PGND
DL
V DD
EP
FUNCTION
Power Input. Bypass to GND with a parallel combination of 0.1μF and 1μF ceramic capacitor.
Boost Flying Capacitor Connection. Connect a 0.1μF ceramic capacitor between BST and HS for the
high-side MOSFET driver supply.
High-Side-Gate Driver Output. Driver output for the high-side MOSFET gate.
Source Connection for High-Side MOSFET. Also serves as a return terminal for the high-side driver.
High-Side Noninverting Logic Input
Low-Side Noninverting Logic Input (MAX5062A/C, MAX5063A/C). Low-side inverting logic input
(MAX5062B/D, MAX5063B/D).
Ground. Use GND as a return path to the DL driver output and IN_H/IN_L inputs.
Low-Side-Gate Driver Output. Drives low-side MOSFET gate.
Exposed Pad. Internally connected to GND. Externally connect the exposed pad to a large ground
plane to aid in heat dissipation (MAX5062C/D, MAX5063C/D only).
MAX5064 Pin Description
FUNCTION
Boost Flying Capacitor Connection. Connect a 0.1μF ceramic capacitor between BST and HS for the
high-side MOSFET driver supply.
High-Side-Gate Driver Output. Drives high-side MOSFET gate.
Source Connection for High-Side MOSFET. Also serves as a return terminal for the high-side driver.
Analog Ground. Return path for low-switching current signals. IN_H/IN_L inputs referenced to
Break-Before-Make Programming Resistor Connection. Connect a 10k ? to 100k ? resistor from BBM
to AGND to program the break-before-make time (t BBM ) from 16ns to 95ns. Resistance values
greater than 200k ? disables the BBM function and makes t BBM = 1ns. Bypass this pin with at least a
1nF capacitor to AGND.
High-Side Inverting CMOS (V DD / 2) (MAX5064A), or TTL (MAX5064B) Logic Input. Connect to
AGND when not used.
High-Side Noninverting CMOS (V DD / 2) (MAX5064A), or TTL (MAX5064B) Logic Input. Connect to
V DD when not used.
Low-Side Inverting CMOS (V DD / 2) (MAX5064A), or TTL (MAX5064B) Logic Input. Connect to AGND
when not used.
Low-Side Noninverting CMOS (V DD / 2) (MAX5064A), or TTL (MAX5064B) Logic Input. Connect to
V DD when not used.
Power Ground. Return path for high-switching current signals. Use PGND as a return path for the
low-side driver.
Low-Side-Gate Driver Output. Drives the low-side MOSFET gate.
Power Input. Bypass to PGND with a 0.1μF ceramic in parallel with a 1μF ceramic capacitor.
Exposed Pad. Internally connected to AGND. Externally connect to a large ground plane to aid in
heat dissipation.
8
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| MAX5065EAI+ | 功能描述:电流型 PWM 控制器 Dual-Phase .6-3.3V Parallelable Average RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
| MAX5065EAI+T | 功能描述:电流型 PWM 控制器 Dual-Phase .6-3.3V Parallelable Average RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
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