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| 型号： | MAX8702ETP+T |
| 厂商： | Maxim Integrated |
| 文件页数： | 3/14页 |
| 文件大小： | 0K |
| 描述： | IC DRVR MOSFET DUAL 20-TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 25ns |
| 电流 - 峰： | 1.5A |
| 配置数： | 4 |
| 输出数： | 4 |
| 电源电压： | 4.5 V ~ 28 V |
| 工作温度： | -40°C ~ 100°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-WFQFN 裸露焊盘 |
| 供应商设备封装： | 20-TQFN-EP（4x4） |
| 包装： | 带卷 (TR) |
Dual-Phase MOSFET Drivers
with Temperature Sensor
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 2. V CC = V DD = V SHDN = V SKIP = 5V, T A = 0 ° C to +85 ° C . Typical values are at T A = +25 ° C, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Thermal-Shutdown Threshold
10 ° C hysteresis
+160
° C
LOGIC CONTROL SIGNALS
Logic Input High Voltage
Logic Input Low Voltage
SHDN , SKIP , PWM1, PWM2
SHDN , SKIP , PWM1, PWM2
2.4
0.8
V
V
Logic Input Current
SHDN , SKIP , PWM1, PWM2
-1
+1
μA
ELECTRICAL CHARACTERISTICS
(Circuit of Figure 2. V CC = V DD = V SHDN = V SKIP = 5V, T A = -40 ° C to +100 ° C , unless otherwise noted.) (Note 3)
PARAMETER
Input Voltage Range
SYMBOL
V CC
CONDITIONS
MIN
4.5
TYP
MAX
5.5
UNITS
V
V CC Undervoltage-Lockout
Threshold
V UVLO
85mV typical
hysteresis
V CC rising
V CC falling
3.4
3.3
4.1
4.0
V
V CC Quiescent Current
V DD Quiescent Current
V CC Shutdown Current
V DD Shutdown Current
I CC
I DD
SKIP = AGND, PWM_ = PGND_
SKIP = AGND, PWM_ = V CC
SKIP = AGND, PWM_ = PGND_,
T A = -40 ° C to +85 ° C
SHDN = SKIP = AGND, T A = -40 ° C to +85 ° C
SHDN = SKIP = AGND, T A = -40 ° C to +85 ° C
450
3
5
5
5
μA
mA
μA
μA
μA
GATE DRIVERS AND DEAD-TIME CONTROL
DH_ On-Resistance (Note 2)
DL_ On-Resistance (Note 2)
R DH
R DL _ HIGH
R DL _ LOW
V BST _ - V LX _ = 5V
High state (pullup)
Low state (pulldown)
1.0
1.0
0.35
4.5
4.5
2.0
?
?
TEMPERATURE SENSOR
DRHOT Output Low Voltage
I SINK = 3mA
0.4
V
LOGIC CONTROL SIGNALS
Logic Input High Voltage
Logic Input Low Voltage
SHDN , SKIP , PWM1, PWM2
SHDN , SKIP , PWM1, PWM2
2.4
0.8
V
V
Note 1: Static drivers instead of pulsed-level translators.
Note 2: Production testing limitations due to package handling require relaxed maximum on-resistance specifications for the
thin QFN package.
Note 3: Specifications from -40 ° C to +100 ° C are guaranteed by design, not production tested.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX8703ETP | 功能描述:功率驱动器IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX8703ETP+T | 功能描述:功率驱动器IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX8703ETP-T | 功能描述:功率驱动器IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX8704EUB | 功能描述:低压差稳压器 - LDO RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| MAX8704EUB+ | 功能描述:线性稳压器 - 标准 High current Low Voltage LDO RoHS:否 制造商:STMicroelectronics 输出类型: 极性: 输出电压:1.8 V 输出电流:150 mA 负载调节: 最大输入电压:5.5 V 线路调整率: 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:SOT-323-5L |
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