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| 型号： | MAX8702ETP+T |
| 厂商： | Maxim Integrated |
| 文件页数： | 8/14页 |
| 文件大小： | 0K |
| 描述： | IC DRVR MOSFET DUAL 20-TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 25ns |
| 电流 - 峰： | 1.5A |
| 配置数： | 4 |
| 输出数： | 4 |
| 电源电压： | 4.5 V ~ 28 V |
| 工作温度： | -40°C ~ 100°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-WFQFN 裸露焊盘 |
| 供应商设备封装： | 20-TQFN-EP（4x4） |
| 包装： | 带卷 (TR) |
Dual-Phase MOSFET Drivers
with Temperature Sensor
efficiency while allowing operation with a variety of
MOSFETs and PWM controllers. A UVLO circuit allows
proper power-on sequencing. The PWM control inputs
are both TTL and CMOS compatible.
V DD
C VDD
INPUT
(V IN )
The MAX8702 integrates a resistor-programmable tem-
perature sensor. An open-drain output ( DRHOT ) signals
to the system when the die temperature of the driver
BST
(R BST )*
D BST
exceeds the set temperature. See the Temperature
Sensor section.
MOSFET Gate Drivers (DH, DL)
The DH and DL drivers are optimized for driving mod-
erately sized high-side and larger low-side power
DH
LX
C BST
N H
L
MOSFETs. This is consistent with the low duty factor
V GS ( TH ) < V IN ? RSS ?
seen in the notebook CPU environment, where a large
V IN - V OUT differential exists. Two adaptive dead-time
circuits monitor the DH and DL outputs and prevent the
opposite-side FET from turning on until DH or DL is fully
off. There must be a low-resistance, low-inductance
path from the DH and DL drivers to the MOSFET gates
for the adaptive dead-time circuits to work properly.
Otherwise, the sense circuitry interprets the MOSFET
gate as “ off ” while there is actually still charge left on
the gate. Use very short, wide traces measuring 10 to
20 squares (50 to 100 mils wide if the MOSFET is 1in
from the device).
The internal pulldown transistor that drives DL low is
robust, with a 0.35 ? (typ) on-resistance. This helps pre-
vent DL from being pulled up due to capacitive coupling
from the drain-to-gate capacitance of the low-side syn-
chronous-rectifier MOSFETs when LX switches from
ground to V IN . Applications with high input voltages and
long, inductive DL traces may require additional gate-to-
source capacitance to ensure fast-rising LX edges do
not pull up the low-side MOSFET ’ s gate voltage, caus-
ing shoot-through currents. The capacitive coupling
between LX and DL created by the MOSFET ’ s gate-to-
drain capacitance (C RSS ), gate-to-source capacitance
(C ISS - C RSS ), and additional board parasitics should
not exceed the minimum threshold voltage:
? C ?
? C ISS ?
Lot-to-lot variation of the threshold voltage can cause
problems in marginal designs. Typically, adding a
MAX8702
MAX8703
( )* OPTIONAL—THE RESISTOR REDUCES THE SWITCHING-NODE RISE TIME.
Figure 4. High-Side Gate-Driver Boost Circuitry
side MOSFETs. If the turn-off delay time of the low-side
MOSFETs is too long, the high-side MOSFETs can turn
on before the low-side MOSFETs have actually turned
off. Adding a resistor of less than 5 ? in series with BST
slows down the high-side MOSFET turn-on time, elimi-
nating the shoot-through currents without degrading
the turn-off time (R BST in Figure 4). Slowing down the
high-side MOSFETs also reduces the LX node rise
time, thereby reducing the EMI and high-frequency
coupling responsible for switching noise.
Boost Capacitor Selection
The MAX8702/MAX8703 use a bootstrap circuit to gen-
erate the floating supply voltages for the high-side dri-
vers (DH). The boost capacitors (C BST ) selected must
be large enough to handle the gate-charging require-
ments of the high-side MOSFETs. Typically, 0.1μF
ceramic capacitors work well for low-power applica-
tions driving medium-sized MOSFETs. However, high-
current applications driving large, high-side MOSFETs
require boost capacitors larger than 0.1μF. For these
applications, select the boost capacitors to avoid dis-
charging the capacitor more than 200mV while charg-
ing the high-side MOSFET ’ s gates:
4700pF capacitor between DL and power ground,
close to the low-side MOSFETs, greatly reduces cou-
pling. To prevent excessive turn-off delays, do not
C BST =
N x Q GATE
200 mV
exceed 22nF of total gate capacitance.
Alternatively, shoot-through currents may be caused by
a combination of fast high-side MOSFETs and slow low-
where N is the number of high-side MOSFETs used for
one phase and Q GATE is the total gate charge speci-
fied in the MOSFET ’ s data sheet. For example, assume
8
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX8703ETP | 功能描述:功率驱动器IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX8703ETP+T | 功能描述:功率驱动器IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX8703ETP-T | 功能描述:功率驱动器IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX8704EUB | 功能描述:低压差稳压器 - LDO RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| MAX8704EUB+ | 功能描述:线性稳压器 - 标准 High current Low Voltage LDO RoHS:否 制造商:STMicroelectronics 输出类型: 极性: 输出电压:1.8 V 输出电流:150 mA 负载调节: 最大输入电压:5.5 V 线路调整率: 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:SOT-323-5L |
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