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参数资料
| 型号： | MBL800E33C |
| 厂商： | HITACHI METALS LTD |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 800 A, 3300 V, N-CHANNEL IGBT |
| 封装： | MODULE-9 |
| 文件页数： | 1/6页 |
| 文件大小： | 555K |
| 代理商： | MBL800E33C |
IGBT MODULE
MBL800E33C
Silicon N-channel IGBT
FEATURES
High thermal fatigue durability.(delta Tc=70 ,N>30,000cycles)
diode – ultra soft fast recovery diode(USFD).
low noise due to built-in free-wheeling
High speed,low loss IGBT module.
Low driving power due to low input
capacitance MOS gate.
High reliability,high durability module.
lsolated heat sink(terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25oC )
Item
Symbol
Unit
MBL800E33C
Collector Emitter Voltage
VCES
V
3,300
Gate Emitter Voltage
VGES
V
±20
DC
IC
800
Collector Current
1ms
ICp
A
1,600
DC
IF
800
Forward Current
1ms
IFM
A
1,600
Junction Temperature
Tj
oC
-40 ~ +125
Storage Temperature
Tstg
oC
-40 ~ +125
lsolation Voltage
VISO
VRMS
6,000(AC 1 minute)
Terminals (M4/M8)
-
2/10
(1)
Screw Torque
Mounting (M6)
-
Nm
6
(2)
Notes: (1) Recommended Value 1.8
±0.2Nm 9±1Nm (2) Recommended Value 5.5±0.5Nm
CHARECTERISTICS
1) IGBT + FWD
Item
Symbol Unit
Min.
Typ. Max.
Test Conditions
-
12
VCE=3,300V, VGE=0V, T
=25
Collector Emitter Cut-Off Current
I CES
mA
-
20
60
VCE=3,300V, VGE=0V,T
=125
Gate Emitter Leakage Current
IGES
nA
-
500 VGE=
20V, VCE=0V, T
=25
-
4.1
5.0 IC=800A, VGE=15V, Tj=25
Collector Emitter Saturation Voltage
VCE(sat)
V
-
4.8
5.3 IC=800A, VGE=15V ,T
=125
Gate Emitter Threshold Voltage
VGE(TO)
V
4.5
5.5
6.5 VCE=5V, Ic=800mA, Tj=25
Input Capacitance
Cies
nF
-
100
-
VCE=10V, VGE=0V,f=100KHz, Tj=25
Rise Time
tr
-
2.0
3.2
Turn On Time
ton
-
2.9
3.8
Fall Time
tf
-
1.7
3.2
Switching Times
Turn Off Time
toff
s
-
3.5
5.6
Turn On Loss
Eon(10%)
J/P
-
1.6
2.1
Turn Off Loss
Eoff(10%)
J/P
-
1.1
1.6
VCC=1,650V
Ic=800A
L=120nH
RG=4.7 (3)
VGE=±15V
T
=125oC
-
2.2
2.8 -Ic=800A, VGE=0V, T
=25
Peak Forward Voltage Drop
VFM
V
-
2.3
2.75 -Ic=800A, VGE=0V, T
=125
IGBT
Rth(j-c)
-
0.013
Thermal Impedance
FWD
Rth(j-c)
K/W
-
0.026
Junction to case
2) DIODE
Item
Symbol Unit
Min.
Typ. Max.
Test Conditions
-
12
VAK=3,300V
Collector Emitter Cut-Off Current
I AKS
mA
-
5
20
VAK=3,300V,Tc=125
-
2.4
3.0 Tj=25
Peak Forward Voltage Drop
VF
V
-
2.7
3.2 Tj=125
IF =800A
At Main Terminal
(Terminal resistance:0.5m
typical)
Reverse Recovery Time
trr
s
-
0.8
1.4
Reverse Recovery Loss
Err(10%)
J/P
-
1.0
1.4
IF =800A, VCC=1,650V (4)
L=120nH, T
=125oC
Thermal Impedance
Rth(j-c)
K/W
-
0.026 Junction to case
Notes: (3) RG value is the test condition's value for decision of the switching times,
not recommended value. Please, Determine the suitable RG value after the
measurement of switching waveforms(overshoot voltage,etc.)with appliance mounted.
(4)Counter arm IGBT VGE=
¤
15V
Spec.No.IGBT-SP-06011 R1 (P1/5)
CIRCUIT DIAGRAM
OUTLINE DRAWING
Unit in mm
Weight : 1300(g)
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