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参数资料
| 型号： | MBL800E33C |
| 厂商： | HITACHI METALS LTD |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 800 A, 3300 V, N-CHANNEL IGBT |
| 封装： | MODULE-9 |
| 文件页数： | 3/6页 |
| 文件大小： | 555K |
| 代理商： | MBL800E33C |
IGBT MODULE
MBL800E33C
DEPENDENCE OF CURRENT
Spec.No.IGBT-SP-06011 R1 (P3/5)
TYPICAL
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
200
400
600
800
1000
Collector Current IC (A)
T
ur
n-
on
L
os
s
E
on
(J
/p
ul
se
)
Eon(10%)
Eon(full)
Conditions
Tc=125
Vcc=1650V
Rg=4.7
L=120nH
VG=±15V
IC
VGE
10%
VCE
0
t1 t3 t4 t2
Eon(10%)=
!
IC
"
VCE dt
Eon(full)=
#
IC
"
VCE dt
t4
t2
t3
t1
Turn-on Loss vs. Collector Current
TYPICAL
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
200
400
600
800
1000
Collector Current IC (A)
T
ur
n-
of
fL
os
s
E
of
f(
J/
pu
ls
e)
Eoff(10%)
Eoff(full)
Eoff(10%)=
!
IC
"
VCE dt
Eoff(full)=
!
IC
"
VCE dt
t8
t6
t7
t5
VGE
VCE
IC
10%
t8
t7
t
0
t5
t6
Conditions
Tc=125
Vcc=1650V
Rg=4.7
L=120nH
VG=±15V
Turn-off Loss vs. Collector Current
TYPICAL
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
200
400
600
800
1000
Collector Current IC (A)
R
ec
ov
er
y
L
os
s
E
rr
(J
/p
ul
se
)
Err(10%)
Err(full)
$
Conditions
%
Tc=125
&
Vcc=1650V
Rg=4.7
'
L=120nH
VG=±15V
Err(10%)=
(
IC
)
VCE dt
Err(full)=
0
IC
)
VCE dt
t12
t10
t11
t9
VCE
0.1VCE
0.1IF
IRM
IC
t10
t11
t
0
t12
t9
IF
Recovery Loss vs. Collector Current
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
200
400
600
800
1000
Collector Current
IC (A)
Sw
itc
hi
ng
T
im
e
to
n,
tr
,to
ff
,tf
,tr
r
(
s)
toff
tf
ton
trr
tr
1
Conditions
2
Tc=125
3
Vcc=1650V
Rg=4.7
4
L=120nH
VG=±15V
Switching Time vs. Collector Current
TYPICAL
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