参数资料
型号: MC68711E20VFNE2
厂商: Freescale Semiconductor
文件页数: 27/138页
文件大小: 0K
描述: IC MCU 8BIT 52-PLCC
标准包装: 23
系列: HC11
核心处理器: HC11
芯体尺寸: 8-位
速度: 4MHz
连通性: SCI,SPI
外围设备: POR,WDT
输入/输出数: 38
程序存储器容量: 20KB(20K x 8)
程序存储器类型: OTP
EEPROM 大小: 512 x 8
RAM 容量: 768 x 8
电压 - 电源 (Vcc/Vdd): 4.5 V ~ 5.5 V
数据转换器: A/D 8x8b
振荡器型: 内部
工作温度: -40°C ~ 105°C
封装/外壳: 52-LCC(J 形引线)
包装: 管件
Ordering Information and Mechanical Specifications
MC68HC711D3 Data Sheet, Rev. 2.1
122
Freescale Semiconductor
10.4 44-Pin PLCC (Case 777-02)
-N-
-L-
-M-
D
Y
D
K
V
W
1
44
BRK
B
Z
U
X
VIEW D-D
S
L-M
M
0.007(0.180)
N S
T
S
L-M
M
0.007(0.180)
N S
T
G1
S
L-M
S
0.010 (0.25)
N S
T
K1
F
H
S
L-M
M
0.007(0.180)
N S
T
Z
G
G1
R
A
E
J
VIEW S
C
S
L-M
M
0.007(0.180)
N S
T
S
L-M
M
0.007(0.180)
N S
T
0.004 (0.10)
-T-
SEATING
PLANE
VIEW S
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.685
0.695
17.40
17.65
B
0.685
0.695
17.40
17.65
C
0.165
0.180
4.20
4.57
E
0.090
0.110
2.29
2.79
F
0.013
0.019
0.33
0.48
G
0.050 BSC
1.27 BSC
H
0.026
0.032
0.66
0.81
J
0.020
0.51
K
0.025
0.64
R
0.650
0.656
16.51
16.66
U
0.650
0.656
16.51
16.66
V
0.042
0.048
1.07
1.21
W
0.042
0.048
1.07
1.21
X
0.042
0.056
1.07
1.42
Y
0.020
0.50
Z
2
°
10
°
G1
0.610
0.630
15.50
16.00
K1
0.040
1.02
S
L-M
S
0.010 (0.25)
N S
T
S
L-M
M
0.007(0.180)
N S
T
2
°
10
°
NOTES:
1. DATUMS -L-, -M-, AND -N- ARE DETERMINED
WHERE TOP OF LEAD SHOLDERS EXITS
PLASTIC BODY AT MOLD PARTING LINE.
2. DIMENSION G1, TRUE POSITION TO BE
MEASURED AT DATUM -T-, SEATING PLANE.
3. DIMENSION R AND U DO NOT INCLUDE MOLD
FLASH. ALLOWABLE MOLD FLASH IS 0.010
(0.25) PER SIDE.
4. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
5. CONTROLLING DIMENSION: INCH.
6. THE PACKAGE TOP MAY BE SMALLER THAN
THE PACKAGE BOTTOM BY UP TO 0.012
(0.300). DIMENSIONS R AND U ARE DETERMINED
AT THE OUTERMOST EXTREMES OF THE
PLASTIC BODY EXCLUSIVE OF THE MOLD
FLASH, TIE BAR BURRS, GATE BURRS AND
INTERLEAD FLASH, BUT INCLUDING ANY
MISMATCH BETWEEN THE TOP AND BOTTOM
OF THE PLASTIC BODY.
7. DIMINSION H DOES NOT INCLUDE DAMBAR
PROTRUSION OR INTRUSION. THE DAMBAR
PROTUSION(S) SHALL NOT CAUSE THE H
DIMINSION TO BE GREATER THAN 0.037
(0.940124). THE DAMBAR INTRUSION(S) SHALL
NOT CAUSE THE H DIMINISION TO SMALLER
THAN 0.025 (0.635).
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