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| 型号： | MC68HC908JL8MFAE |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, PQFP32 |
| 封装： | PLASTIC, LQFP-32 |
| 文件页数： | 3/56页 |
| 文件大小： | 648K |
| 代理商： | MC68HC908JL8MFAE |
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MC68HC908JL8SM/D
FLASH Module
MC68HC908JL8MC68HC908JK8
NOTE:
An erased bit reads as logic 1 and a programmed bit reads as logic 0.
A security feature prevents unauthorized viewing of the FLASH contents.
FLASH Control
Register
The FLASH control register (FLCR) controls FLASH program and erase
operations.
HVEN — High Voltage Enable Bit
1 = High voltage enabled to array and charge pump on
MASS — Mass Erase Control Bit
1 = Mass Erase operation selected
ERASE — Erase Control Bit
1 = Erase operation selected
PGM — Program Control Bit
1 = Program operation selected
FLASH Page Erase
Operation
Use the following procedure to erase a page of FLASH memory. A page
consists of 64 consecutive bytes starting from addresses $XX00, $XX40,
$XX80, or $XXC0. Any FLASH memory page can be erased alone. The 36-
byte user interrupt vector area also forms a page, but only be erased by a mass
erase operation.
1.
Set the ERASE bit and clear the MASS bit in the FLASH control register.
2.
Read the FLASH block protect register ($FFCF).
3.
Write any data to any FLASH location within the address range of the
block to be erased.
4.
Wait for a time, tnvs (minimum 10 s).
5.
Set the HVEN bit.
6.
Wait for a time, terase (minimum 4 ms).
7.
Clear the ERASE and MASS bits.
8.
Wait for a time, tnvh (minimum 5 s).
9.
Clear the HVEN bit.
10.
After time, trcv (typical 1 s), the memory can be accessed in read mode
again.
NOTE:
Programming and erasing of FLASH locations cannot be performed by code
being executed from the FLASH memory. These operations must be performed
in the order as shown, but other unrelated operations may occur between the
steps.
$FE08
Bit 7
654321
Bit 0
0000
HVEN
MASS
ERASE
PGM
Reset:
00000000
Figure 5. FLASH Control Register (FLCR)
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For More Information On This Product,
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