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参数资料
| 型号： | MC68HC908JL8MFAE |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, PQFP32 |
| 封装： | PLASTIC, LQFP-32 |
| 文件页数： | 51/56页 |
| 文件大小： | 648K |
| 代理商： | MC68HC908JL8MFAE |
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MC68HC908JL8SM/D
Condensed Electrical Characteristics
MC68HC908JL8MC68HC908JK8
Analog-to-Digital Converter Characteristics
Memory Characteristics
Characteristic
Symbol
Min
Max
Unit
Comments
Input voltages
VADIN
VSS
VDD
V—
Resolution
BAD
88
Bits
—
Absolute accuracy
AAD
± 0.5
± 1.5
LSB
Includes quantization
ADC internal clock
fADIC
0.5
1.048
MHz
tADIC = 1/fADIC, tested only at 1 MHz
Conversion range
RAD
VSS
VDD
V—
Power-up time
tADPU
16
tADIC cycles
tADIC = 1/fADIC
Conversion time
tADC
14
15
tADIC cycles
tADIC = 1/fADIC
Sample time(1)
tADS
5—
tADIC cycles
tADIC = 1/fADIC
Zero input reading(2)
ZADI
00
01
Hex
VIN = VSS
Full-scale reading(3)
FADI
FE
FF
Hex
VIN = VDD
Input capacitance
CADI
—
8
pF
Not tested
Input leakage(3)
——
± 1
A—
1. Source impedances greater than 10 k
may adversely affect internal RC charging time during input sampling.
2. Zero-input/full-scale reading requires sufficient decoupling measures for accurate conversions.
3. The external system error caused by input leakage current is approximately equal to the product of R source and input current.
Characteristic
Symbol
Min
Max
Unit
RAM data retention voltage
VRDR
1.3
—
V
FLASH program bus clock frequency
—
1
—
MHz
FLASH read bus clock frequency
fread
(1)
32 k
8M
Hz
FLASH page erase time
terase
(2)
4—
ms
FLASH mass erase time
tmerase
(3)
4—
ms
FLASH PGM/ERASE to HVEN set up time
tnvs
10
—
s
FLASH high-voltage hold time
tnvh
5—
s
FLASH high-voltage hold time (mass erase)
tnvhl
100
—
s
FLASH program hold time
tpgs
5—
s
FLASH program time
tprog
30
40
s
FLASH return to read time
trcv
(4)
1—
s
FLASH cumulative program hv period
tHV
(5)
—4
ms
FLASH row erase/program endurance(6)
—
10 k
—
cycles
FLASH data retention time(7)
—
10
—
years
1. fRead is defined as the frequency range for which the FLASH memory can be read.
2. If the page erase time is longer than terase min, there is no erase disturb, but it reduces the endurance of the FLASH memory.
3. If the mass erase time is longer than tmerase min, there is no erase disturb, but it reduces the endurance of the FLASH memory.
4. trcv is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clearing HVEN to logic 0.
5. tHV is defined as the cumulative high voltage programming time to the same row before next erase.
tHV must satisfy this condition: tnvs + tnvh + tpgs + (tprog × 32) ≤ tHV max.
6. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many erase/program cycles.
7. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum time specified.
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Freescale Semiconductor, Inc.
For More Information On This Product,
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