参数资料
型号: MCH6445-TL-E
厂商: ON Semiconductor
文件页数: 4/5页
文件大小: 0K
描述: MOSFET N-CH 60V 4A MCPH6
标准包装: 3,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 4A
开态Rds(最大)@ Id, Vgs @ 25° C: 78 毫欧 @ 2A,10V
闸电荷(Qg) @ Vgs: 10nC @ 10V
输入电容 (Ciss) @ Vds: 505pF @ 20V
功率 - 最大: 1.5W
安装类型: 表面贴装
封装/外壳: 6-SMD,扁平引线
供应商设备封装: 6-MCPH
包装: 带卷 (TR)
MCH6445
0 M
1m
ms
DC 10
era
op 0m
tio
n(
° C
10
9
8
7
6
5
4
3
2
VDS=30V
ID=4A
VGS -- Qg
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
IDP=16A
ID=4A
Operation in this area
is limited by RDS(on).
ASO
10
s
Ta =
25
PW ≤ 10 M s
10
s
s
)
(1500mm 2 × 0.8mm)
5 7 1.0
5 7 10
5 7 100
0.1
Drain-to-Source Voltage, VDS -- V
1
0
1.8
1.6
0
1
2
3 4 5 6 7 8 9 10
Total Gate Charg e, Qg - - nC IT13797
PD -- Ta
When mounted on ceramic substrate
3 Ta=25 ° C
2 Single pulse
0.01 When mounted on ceramic substrate (1500mm 2 × 0.8mm)
2 3 2 3 2 3
IT15073
1.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40 60 80 100 120
Ambient Temperature, Ta -- ° C
140 160
IT15074
No. A1566-4/5
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