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参数资料
| 型号： | MCM63F737TQ9 |
| 厂商： | MOTOROLA INC |
| 元件分类： | SRAM |
| 英文描述： | 128K X 36 CACHE SRAM, 9 ns, PQFP100 |
| 封装： | TQFP-100 |
| 文件页数： | 2/21页 |
| 文件大小： | 320K |
| 代理商： | MCM63F737TQ9 |
MCM63F737
MCM63F819
10
MOTOROLA FAST SRAM
WRITE TRUTH TABLE
Cycle Type
SGW
SW
SBa
SBb
SBc
(See Note 1)
SBd
(See Note 1)
Read
H
X
Read
H
L
H
Write Byte a
H
L
H
Write Byte b
H
L
H
L
H
Write Byte c (See Note 1)
H
L
H
L
H
Write Byte d (See Note 1)
H
L
H
L
Write All Bytes
H
L
Write All Bytes
L
X
NOTE:
1. Valid Only for MCM63F737.
ABSOLUTE MAXIMUM RATINGS (See Note 1)
Rating
Symbol
Value
Unit
Notes
Power Supply Voltage
VDD
VSS – 0.5 to 4.6
V
I/O Supply Voltage
VDDQ
VSS – 0.5 to VDD
V
2
Input Voltage Relative to VSS for
Any Pin Except VDD
Vin, Vout
VSS – 0.5 to
VDD + 0.5
V
2
Input Voltage (Three–State I/O)
VIT
VSS – 0.5 to
VDDQ + 0.5
V
2
Output Current (per I/O)
Iout
± 20
mA
Package Power Dissipation
PD
1.6
W
3
Temperature Under Bias
Tbias
– 10 to 85
°C
Storage Temperature
Tstg
– 55 to 125
°C
NOTES:
1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for extended
periods of time could affect device reliability.
2. This is a steady–state DC parameter that is in effect after the power supply has
achieved its nominal operating level. Power sequencing is not necessary.
3. Power dissipation capability is dependent upon package characteristics and use
environment. See Package Thermal Characteristics.
PACKAGE THERMAL CHARACTERISTICS — TQFP
Rating
Symbol
Max
Unit
Notes
Junction to Ambient (@ 200 lfm)
Single–Layer Board
Four–Layer Board
R
θJA
40
25
°C/W
1, 2
Junction to Board (Bottom)
R
θJB
17
°C/W
3
Junction to Case (Top)
R
θJC
9
°C/W
4
NOTES:
1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient
temperature, air flow, board population, and board thermal resistance.
2. Per SEMI G38–87.
3. Indicates the average thermal resistance between the die and the printed circuit board.
4. Indicates the average thermal resistance between the die and the case top surface via the cold plate method (MIL SPEC–883 Method 1012.1).
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to this high–impedance
circuit.
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