参数资料
型号: MCM63F737TQ9
厂商: MOTOROLA INC
元件分类: SRAM
英文描述: 128K X 36 CACHE SRAM, 9 ns, PQFP100
封装: TQFP-100
文件页数: 4/21页
文件大小: 320K
代理商: MCM63F737TQ9
MCM63F737
MCM63F819
12
MOTOROLA FAST SRAM
SUPPLY CURRENTS
Parameter
Symbol
Min
Typ
Max
Unit
Notes
Input Leakage Current (0 V
≤ Vin ≤ VDD)
Ilkg(I)
± 1
A
1
Output Leakage Current (0 V
≤ Vin ≤ VDDQ)
Ilkg(O)
± 1
A
AC Supply Current (Device Selected,
MCM63F737 / 819–8.5
All Outputs Open, Freq = Max)
MCM63F737 / 819–9
Includes VDD Only
MCM63F737 / 819–10
IDDA
395/330
370/300
350/285
mA
2, 3, 4
CMOS Standby Supply Current (Device Deselected, Freq = 0,
VDD = Max, All Inputs Static at CMOS Levels)
ISB2
15
mA
5, 6
Sleep Mode Supply Current (Device Deselected, Freq = Max, VDD
= Max, All Other Inputs Static at CMOS Levels,
ZZ
≥ VDD –0.2 V)
IZZ
5
mA
1, 5, 6
TTL Standby Supply Current (Device Deselected, Freq = 0,
VDD = Max, All Inputs Static at TTL Levels)
ISB3
35
mA
5, 7
Clock Running (Device Deselected,
MCM63F737 / 819–8.5
Freq = Max, VDD = Max, All Inputs
MCM63F737 / 819–9
Toggling at CMOS Levels)
MCM63F737 / 819–10
ISB4
130/120
115/100
110/95
mA
5, 6
Static Clock Running (Device
MCM63F737 / 819–8.5
Deselected, Freq = Max, VDD = Max,
MCM63F737 / 819–9
All Inputs Static at TTL Levels)
MCM63F737 / 819–10
ISB5
50/40
45/35
35/30
mA
5, 7
NOTES:
1. LBO and ZZ pins have an internal pull–up and pull–down, respectively; and will exhibit leakage currents of
± 5 A.
2. Reference AC Operating Conditions and Characteristics for input and timing.
3. All addresses transition simultaneously low (LSB) then high (MSB).
4. Data states are all zero.
5. Device is deselected as defined by the Truth Table.
6. CMOS levels for I/Os are VIT ≤ VSS + 0.2 V or ≥ VDDQ – 0.2 V. CMOS levels for other inputs are Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V.
7. TTL levels for I/Os are VIT ≤ VIL or ≥ VIH2. TTL Levels for other inputs are Vin ≤ VIL or ≥ VIH.
CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, TA = 0 to 70°C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Min
Typ
Max
Unit
Input Capacitance
Cin
4
5
pF
Input/Output Capacitance
CI/O
7
8
pF
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