参数资料
型号: MCM63P818ZP66
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: SRAM
英文描述: 256K X 18 CACHE SRAM, 7 ns, PBGA119
封装: 7 X 17 MM, PLASTIC, BGA-119
文件页数: 3/21页
文件大小: 451K
代理商: MCM63P818ZP66
MCM63P736
MCM63P818
11
MOTOROLA FAST SRAM
PACKAGE THERMAL CHARACTERISTICS — PBGA
Rating
Symbol
Max
Unit
Notes
Junction to Ambient (@ 200 lfm)
Single–Layer Board
Four–Layer Board
R
θJA
38
22
°C/W
1, 2
Junction to Board (Bottom)
R
θJB
14
°C/W
3
Junction to Case (Top)
R
θJC
5
°C/W
4
NOTES:
1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient
temperature, air flow, board population, and board thermal resistance.
2. Per SEMI G38–87.
3. Indicates the average thermal resistance between the die and the printed circuit board.
4. Indicates the average thermal resistance between the die and the case top surface via the cold plate method (MIL SPEC–883 Method 1012.1).
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V + 10%, – 5%, TA = 0 to 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS AND DC CHARACTERISTICS: 2.5 V I/O SUPPLY
(Voltages Referenced to VSS = 0 V)
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VDD
3.135
3.3
3.6
V
I/O Supply Voltage
VDDQ
2.375
2.5
2.9
V
Input Low Voltage
VIL
– 0.3
0.7
V
Input High Voltage
VIH
1.7
VDD + 0.3
V
Input High Voltage I/O Pins
VIH2
1.7
VDDQ + 0.3
V
Output Low Voltage (IOL = 2 mA)
VOL
0.7
V
Output High Voltage (IOL = – 2 mA)
VOH
1.7
V
RECOMMENDED OPERATING CONDITIONS AND DC CHARACTERISTICS: 3.3 V I/O SUPPLY
(Voltages Referenced to VSS = 0 V)
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VDD
3.135
3.3
3.6
V
I/O Supply Voltage
VDDQ
3.135
3.3
VDD
V
Input Low Voltage
VIL
– 0.5
0.8
V
Input High Voltage
VIH
2
VDD + 0.5
V
Input High Voltage I/O Pins
VIH2
2
VDDQ + 0.5
V
Output Low Voltage (IOL = 8 mA)
VOL
0.4
V
Output High Voltage (IOL = – 4 mA)
VOH
2.4
V
VIH
20% tKHKH (MIN)
VSS
VSS – 1.0 V
Figure 1. Undershoot Voltage
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For More Information On This Product,
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