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| 型号： | MCP14E3-E/MF |
| 厂商： | Microchip Technology |
| 文件页数： | 3/26页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR 4.0A DUAL 8DFN |
| 标准包装： | 60 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 46ns |
| 电流 - 峰： | 4A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN-S（6x5） |
| 包装： | 管件 |
| 产品目录页面： | 670 (CN2011-ZH PDF) |
MCP14E3/MCP14E4/MCP14E5
1.0
ELECTRICAL
CHARACTERISTICS
? Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
Absolute Maximum Ratings ?
Supply Voltage ................................................................+20V
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Input Voltage ............................... (V DD + 0.3V) to (GND – 5V)
Enable Voltage .............................(V DD + 0.3V) to (GND - 5V)
Input Current (V IN >V DD )................................................50 mA
Package Power Dissipation (T A = 50°C)
8L-DFN ....................................................................... Note 3
8L-PDIP ........................................................................1.10W
8L-SOIC .....................................................................665 mW
DC CHARACTERISTICS (NOTE 2)
Electrical Specifications: Unless otherwise indicated, T A = +25°C, with 4.5V ≤ V DD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘ 1 ’, High Input Voltage
Logic ‘ 0 ’, Low Input Voltage
V IH
V IL
2.4
—
1.5
1.3
—
0.8
V
V
Input Current
Input Voltage
I IN
V IN
–1
-5
—
—
1
V DD +0.3
μA
V
0V ≤ V IN ≤ V DD
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection With-
V OH
V OL
R OH
R OL
I PK
I REV
V DD – 0.025
—
—
—
—
—
—
—
2.5
2.5
4.0
>1.5
—
0.025
3.5
3.0
—
—
V
V
Ω
Ω
A
A
DC Test
DC Test
I OUT = 10 mA, V DD = 18V
I OUT = 10 mA, V DD = 18V
V DD = 18V (Note 2)
Duty cycle ≤ 2%, t ≤ 300 μs
stand Reverse Current
Switching Time (Note 1)
Rise Time
t R
—
15
30
ns
Figure 4-1 , Figure 4-2
C L = 2200 pF
Fall Time
t F
—
18
30
ns
Figure 4-1 , Figure 4-2
C L = 2200 pF
Propagation Delay Time
Propagation Delay Time
t D1
t D2
—
—
46
50
55
55
ns
ns
Figure 4-1 , Figure 4-2
Figure 4-1 , Figure 4-2
Enable Function (ENB_A, ENB_B)
High-Level Input Voltage
Low-Level Input Voltage
Hysteresis
Enable Leakage Current
V EN_H
V EN_L
V HYST
I ENBL
1.60
1.30
0.10
40
1.90
2.20
0.30
85
2.90
2.40
0.60
115
V
V
V
μA
V DD = 12V, LO to HI Transition
V DD = 12V, HI to LO Transition
V DD = 12V,
ENB_A = ENB_B = GND
Propagation Delay Time
Propagation Delay Time
t D3
t D4
—
—
60
50
—
—
ns
ns
Figure 4-3 (Note 1)
Figure 4-3 (Note 1)
Note 1:
2:
3:
Switching times ensured by design.
Tested during characterization, not production tested.
Package power dissipation is dependent on the copper pad area on the PCB.
? 2008 Microchip Technology Inc.
DS22062B-page 3
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