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| 型号： | MCP1700-2702E/TO |
| 厂商： | Microchip Technology |
| 文件页数： | 3/24页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 2.7V .25A TO-92-3 |
| 标准包装： | 1,000 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 2.7V |
| 输入电压： | 最高 6V |
| 电压 - 压降（标准）： | 0.178V @ 250mA |
| 稳压器数量： | 1 |
| 电流 - 输出： | 250mA（最小） |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-226-3、TO-92-3 标准主体 |
| 供应商设备封装： | TO-92-3 |
| 包装： | 散装 |
MCP1700
1.0
ELECTRICAL
CHARACTERISTICS
? Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
Absolute Maximum Ratings ?
V DD ............................................................................................+ 6.5V
All inputs and outputs w.r.t. .............(V SS -0.3V) to (V IN +0.3V)
Peak Output Current .................................... Internally Limited
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Storage temperature .....................................-65°C to +150°C
Maximum Junction Temperature ................................... 150°C
Operating Junction Temperature...................-40°C to +125°C
ESD protection on all pins (HBM;MM) ............... ≥ 4 kV; ≥ 400V
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise specified, all limits are established for V IN = V R + 1, I LOAD = 100 μA,
C OUT = 1 μF (X7R), C IN = 1 μF (X7R), T A = +25°C.
Boldface type applies for junction temperatures, T J (Note 6) of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input / Output Characteristics
Input Operating Voltage
Input Quiescent Current
Maximum Output Current
Output Short Circuit Current
V IN
I q
I OUT_mA
I OUT_SC
2.3
—
250
200
—
—
1.6
—
—
408
6.0
4
—
—
—
V
μA
mA
mA
I L = 0 mA, V IN = V R +1V
For V R ≥ 2.5V
For V R < 2.5V
V IN = V R + V, V OUT = GND,
Current (peak current) measured
10 ms after short is applied.
Output Voltage Regulation
V OUT Temperature Coefficient
Line Regulation
Load Regulation
Dropout Voltage
V R > 2.5V
Dropout Voltage
V R < 2.5V
Output Rise Time
V OUT
TCV OUT
Δ V OUT /
(V OUT X Δ V IN )
Δ V OUT /V OUT
V IN -V OUT
V IN -V OUT
T R
V R -3.0%
V R -2.0%
—
-1.0
-1.5
—
—
—
V R ±0.4
%
50
±0.75
±1.0
178
150
500
V R +3.0%
V R +2.0%
—
+1.0
+1.5
350
350
—
V
ppm/°C
%/V
%
mV
mV
μs
(V R +1)V ≤ V IN ≤ 6V
I L = 0.1 mA to 250 mA for V R ≥ 2.5V
I L = 0.1 mA to 200 mA for V R < 2.5V
10% V R to 90% V R V IN = 0V to 6V,
R L = 50 Ω resistive
Output Noise
e N
—
3
—
μV/(Hz) 1/2 I L = 100 mA, f = 1 kHz, C OUT = 1 μF
Note 1:
2:
3:
4:
5:
6:
7:
The minimum V IN must meet two conditions: V IN ≥ 2.3V and V IN ≥ ( V R + 3.0% ) + V DROPOUT .
V R is the nominal regulator output voltage. For example: V R = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The
input voltage (V IN = V R + 1.0V); I OUT = 100 μA.
TCV OUT = (V OUT-HIGH - V OUT-LOW ) *10 6 / (V R * Δ Temperature), V OUT-HIGH = highest voltage measured over the
temperature range. V OUT-LOW = lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV OUT .
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with a V R + 1V differential applied.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T A , T J , θ JA ). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
? 2007 Microchip Technology Inc.
DS21826B-page 3
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