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| 型号： | MCP1700-2702E/TO |
| 厂商： | Microchip Technology |
| 文件页数： | 4/24页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 2.7V .25A TO-92-3 |
| 标准包装： | 1,000 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 2.7V |
| 输入电压： | 最高 6V |
| 电压 - 压降（标准）： | 0.178V @ 250mA |
| 稳压器数量： | 1 |
| 电流 - 输出： | 250mA（最小） |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-226-3、TO-92-3 标准主体 |
| 供应商设备封装： | TO-92-3 |
| 包装： | 散装 |
MCP1700
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise specified, all limits are established for V IN = V R + 1, I LOAD = 100 μA,
C OUT = 1 μF (X7R), C IN = 1 μF (X7R), T A = +25°C.
Boldface type applies for junction temperatures, T J (Note 6) of -40°C to +125°C.
Parameters
Power Supply Ripple
Rejection Ratio
Thermal Shutdown Protection
Sym
PSRR
T SD
Min
—
—
Typ
44
140
Max
—
—
Units
dB
°C
Conditions
f = 100 Hz, C OUT = 1 μF, I L = 50 mA,
V INAC = 100 mV pk-pk, C IN = 0 μF,
V R = 1.2V
V IN = V R + 1, I L = 100 μA
Note 1:
2:
3:
4:
5:
6:
7:
The minimum V IN must meet two conditions: V IN ≥ 2.3V and V IN ≥ ( V R + 3.0% ) + V DROPOUT .
V R is the nominal regulator output voltage. For example: V R = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The
input voltage (V IN = V R + 1.0V); I OUT = 100 μA.
TCV OUT = (V OUT-HIGH - V OUT-LOW ) *10 6 / (V R * Δ Temperature), V OUT-HIGH = highest voltage measured over the
temperature range. V OUT-LOW = lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV OUT .
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with a V R + 1V differential applied.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T A , T J , θ JA ). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise specified, all limits are established for V IN = V R + 1, I LOAD = 100 μA,
C OUT = 1 μF (X7R), C IN = 1 μF (X7R), T A = +25°C.
Boldface type applies for junction temperatures, T J (Note 1) of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
T A
T A
T A
-40
-40
-65
+125
+125
+150
°C
°C
°C
Thermal Package Resistance
Thermal Resistance, SOT-23
Thermal Resistance, SOT-89
Thermal Resistance, TO-92
θ JA
θ JA
θ JA
—
—
—
—
336
230
52
131.9
—
—
—
—
°C/W
°C/W
°C/W
°C/W
Minimum Trace Width Single Layer
Board
Typical FR4 4-layer Application
Typical, 1 square inch of copper
EIA/JEDEC JESD51-751-7
4-Layer Board
Note 1:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T A , T J , θ JA ). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
DS21826B-page 4
? 2007 Microchip Technology Inc.
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