参数资料
型号: MCP1725T-1802E/MC
厂商: Microchip Technology
文件页数: 6/32页
文件大小: 0K
描述: IC REG LDO 1.8V .5A 8DFN
产品培训模块: High Current LDOs
标准包装: 3,300
稳压器拓扑结构: 正,固定式
输出电压: 1.8V
输入电压: 2.3 V ~ 6 V
电压 - 压降(标准): 0.21V @ 500mA
稳压器数量: 1
电流 - 输出: 500mA(最小)
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-VFDFN 裸露焊盘
供应商设备封装: 8-DFN(2x3)
包装: 带卷 (TR)
MCP1725
AC/DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, V IN = V OUT(MAX) + V DROPOUT(MAX) (Note 1) , V R = 1.8V for Adjustable Output,
I OUT = 1 mA, C IN = C OUT = 4.7 μF (X7R Ceramic), T A = +25°C.
Boldface type applies for junction temperatures, T J ( Note 7 ) of -40°C to +125°C
Parameters
Sym
Min
Typ
Max
Units
Conditions
Dropout Characteristics
Dropout Voltage
V IN -V OUT
210
350
mV
I OUT = 500 mA, (Note 5)
V IN(MIN) = 2.3V
Power Good Characteristics
PWRGD Input Voltage Operat-
ing Range
V PWRGD_VIN
1.0
1.2
6.0
6.0
V
T A = +25°C
T A = -40°C to +125°C
For V IN < 2.3V, I SINK = 100 μA
PWRGD Threshold Voltage
(Referenced to V OUT )
V PWRGD_TH
89
92
95
%V OUT
Falling Edge
V OUT < 2.5V Fixed, V OUT =
Adj.
90
92
94
V OUT >= 2.5V Fixed
PWRGD Threshold Hysteresis
V PWRGD_HYS
1.0
2.0
3.0
%V OUT
PWRGD Output Voltage Low
V PWRGD_L
0.2
0.4
V
I PWRGD SINK = 1.2 mA,
ADJ = 0V, SENSE = 0V
PWRGD Leakage
P WRGD _ LK
1
nA
V PWRGD = V IN = 6.0V
PWRGD Time Delay
T PG
Rising Edge
R PULLUP = 10 k Ω
I CDELAY = 140 nA (Typ)
10
200
30
300
55
μs
ms
ms
C DELAY = OPEN
C DELAY = 0.01 μF
C DELAY = 0.1 μF
Detect Threshold to PWRGD
T VDET-PWRGD
200
μs
V ADJ or V SENSE =
Active Time Delay
V PWRGD_TH + 20 mV to
V PWRGD_TH - 20 mV
Shutdown Input
Logic High Input
Logic Low Input
SHDN Input Leakage Current
V SHDN-HIGH
V SHDN-LOW
SHDN ILK
45
-0.1
±0.001
15
+0.1
%V IN
%V IN
μA
V IN = 2.3V to 6.0V
V IN = 2.3V to 6.0V
V IN = 6V, SHDN =V IN ,
SHDN = GND
Note 1:
2:
3:
4:
5:
6:
7:
The minimum V IN must meet two conditions: V IN ≥ 2.3V and V IN ≥ V OUT(MAX) + V DROPOUT(MAX).
V R is the nominal regulator output voltage for the fixed cases. V R = 1.2V, 1.8V, etc. V R is the desired set point output
voltage for the adjustable cases. V R = V ADJ * ((R 1 /R 2 )+1). Figure 4-1 .
TCV OUT = (V OUT-HIGH – V OUT-LOW ) *10 6 / (V R * Δ Temperature). V OUT-HIGH is the highest voltage measured over the
temperature range. V OUT-LOW is the lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is
tested over a load range from 1 mA to the maximum specified output current.
Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its
nominal value that was measured with an input voltage of V OUT = V R + V DROPOUT(MAX) .
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air. (i.e., T A , T J , θ JA ). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum +150°C rating. Sustained
junction temperatures above +150°C can impact device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired junction temperature. The test time is small enough such that the rise in the junction temperature over the
ambient temperature is not significant.
DS22026B-page 6
? 2007 Microchip Technology Inc.
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