参数资料
型号: MCP4152T-103E/MF
厂商: Microchip Technology
文件页数: 40/59页
文件大小: 0K
描述: IC POT DGTL SNGL 10K RHEO 8DFN
标准包装: 3,300
接片: 257
电阻(欧姆): 10k
电路数: 1
温度系数: 标准值 150 ppm/°C
存储器类型: 易失
接口: 4 线 SPI(芯片选择)
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-VDFN 裸露焊盘
供应商设备封装: 8-DFN-EP(3x3)
包装: 带卷 (TR)
Micrel, Inc.
KSZ8051MNL/RNL
July 2010
45
M9999-070910-1.0
Electrical Characteristics
(3) (Continued)
Symbol
Parameter
Condition
Min
Typ
Max
Units
100Base-TX Transmit (measured differentially after 1:1 transformer)
VO
Peak Differential Output Voltage
100
Ω termination across differential output
0.95
1.05
V
VIMB
Output Voltage Imbalance
100
Ω termination across differential output
2
%
Rise/Fall Time
3
5
ns
Rise/Fall Time Imbalance
0
0.5
ns
Duty Cycle Distortion
+ 0.25
ns
tr, tf
Overshoot
5
%
VSET
Reference Voltage of ISET
0.65
V
Output Jitter
Peak-to-peak
0.7
1.4
ns
10Base-T Transmit (measured differentially after 1:1 transformer)
VP
Peak Differential Output Voltage
100
Ω termination across differential output
2.2
2.8
V
Jitter Added
Peak-to-peak
3.5
ns
tr, tf
Rise/Fall Time
25
ns
10Base-T Receive
VSQ
Squelch Threshold
5MHz square wave
400
mV
REF_CLK Output
50MHz RMII Clock Output Jitter
Peak-to-peak
(Applies to KSZ8051RNL in RMII – 25MHz
Clock Mode only)
600
ps
Notes:
1. Exceeding the absolute maximum rating may damage the device. Stresses greater than the absolute maximum rating may cause permanent
damage to the device. Operation of the device at these or any other conditions above those specified in the operating sections of this specification
is not implied. Maximum conditions for extended periods may affect reliability.
2. The device is not guaranteed to function outside its operating rating.
3. TA = 25°C. Specification is for packaged product only.
4. Current consumption is for the single 3.3V supply KSZ8051MNL/RNL device only, and includes the transmit driver current and the 1.2V supply
voltage (VDD_1.2) that are supplied by the KSZ8051MNL/RNL.
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