参数资料
型号: MCP4152T-103E/MF
厂商: Microchip Technology
文件页数: 7/59页
文件大小: 0K
描述: IC POT DGTL SNGL 10K RHEO 8DFN
标准包装: 3,300
接片: 257
电阻(欧姆): 10k
电路数: 1
温度系数: 标准值 150 ppm/°C
存储器类型: 易失
接口: 4 线 SPI(芯片选择)
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-VDFN 裸露焊盘
供应商设备封装: 8-DFN-EP(3x3)
包装: 带卷 (TR)
2008 Microchip Technology Inc.
DS22060B-page 15
MCP413X/415X/423X/425X
2.0
TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-1:
Device Current (IDD) vs. SPI
Frequency (fSCK) and Ambient Temperature
(VDD = 2.7V and 5.5V).
FIGURE 2-2:
Device Current (ISHDN) and
VDD. (CS = VDD) vs. Ambient Temperature.
FIGURE 2-3:
CS Pull-up/Pull-down
Resistance (RCS) and Current (ICS) vs. CS Input
Voltage (VCS) (VDD = 5.5V).
FIGURE 2-4:
CS High Input Entry/Exit
Threshold vs. Ambient Temperature and VDD.
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0
50
100
150
200
250
300
350
400
450
500
550
600
650
0.00
2.00
4.00
6.00
8.00
10.00
12.00
fSCK (MHz)
Operati
n
g
Current
(
I
DD
)(
A
)
2.7V -40°C
2.7V 25°C
2.7V 85°C
2.7V 125°C
5.5V -40°C
5.5V 25°C
5.5V 85°C
5.5V 125°C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-40
25
85
125
Ambient Temperature (°C)
S
tandby
Current
(Istby)
(
A)
5.5V
2.7V
0
50
100
150
200
250
234
56
789
10
VCS (V)
R
CS
(k
Oh
m
s
)
-1000
-800
-600
-400
-200
0
200
400
600
800
1000
I CS
(
A
)
ICS
RCS
0
2
4
6
8
10
12
-40
-20
0
20
406080
100
120
Ambient Temperature (°C)
CS
V
PP
Threshold
(
V
)
2.7V Exit
5.5V Exit
2.7V Entry
5.5V Entry
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