参数资料
型号: MCP6566RT-E/OT
厂商: Microchip Technology
文件页数: 14/30页
文件大小: 0K
描述: IC COMPARATOR O-D 1.8V SOT23-5
产品培训模块: MCP656x
标准包装: 1
类型: 通用
元件数: 1
输出类型: CMOS,开路漏极
电压 - 电源,单路/双路(±): 1.8 V ~ 5.5 V
电压 - 输入偏移(最小值): 10mV @ 5.5V
电流 - 输入偏压(最小值): 1pA @ 5.5V
电流 - 输出(标准): 50mA
电流 - 静态(最大值): 130µA
CMRR, PSRR(标准): 66dB CMRR,70dB PSRR
传输延迟(最大): 80ns
磁滞: 5mV
工作温度: -40°C ~ 125°C
封装/外壳: SC-74A,SOT-753
安装类型: 表面贴装
包装: 标准包装
产品目录页面: 681 (CN2011-ZH PDF)
其它名称: MCP6566RT-E/OTDKR
2011 Microchip Technology Inc.
DS22143C-page 3
MCP6566/6R/6U/7/9
1.0
ELECTRICAL
CHARACTERISTICS
1.1
Maximum Ratings*
VDD - VSS ....................................................................... 6.5V
Open-Drain Output.............................................VSS + 10.5V
All other inputs and outputs...........VSS – 0.3V to VDD + 0.3V
Difference Input voltage ......................................|VDD - VSS|
Output Short Circuit Current .................................... ±25 mA
Current at Input Pins .................................................. ±2 mA
Current at Output and Supply Pins .......................... ±50 mA
Storage temperature ................................... -65°C to +150°C
Ambient temp. with power applied .............. -40°C to +125°C
Junction temp............................................................ +150°C
ESD protection on all pins (HBM/MM)
4 kV/300V
*Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated: V
DD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN- = VSS,
and RPull-Up = 20 k to VPU = VDD (see Figure 1-1).
Parameters
Symbol
Min
Typ
Max
Units
Conditions
Power Supply
Supply Voltage
VDD
1.8
5.5
V
Quiescent Current per comparator
IQ
60
100
130
A
IOUT = 0
Power Supply Rejection Ratio
PSRR
63
70
dB
VCM = VSS
Input
Input Offset Voltage
VOS
-10
3+10
mV
VCM = VSS (Note 1)
Input Offset Drift
V
OS/T—
2—
V/°C
VCM = VSS
Input Offset Current
IOS
1—
pA
VCM = VSS
Input Bias Current
IB
—1
pA
TA = +25°C, VIN- = VDD/2
—60
pA
TA = +85°C, VIN- = VDD/2
1500
5000
pA
TA = +125°C, VIN- = VDD/2
Input Hysteresis Voltage
VHYST
1.0
5.0
mV
VCM = VSS (Notes 1, 2)
Input Hysteresis Linear Temp. Co.
TC1
—10
V/°C
Input Hysteresis Quadratic Temp. Co.
TC2
—0.3
V/°C2
Common-Mode Input Voltage Range
VCMR
VSS0.2
VDD+0.2
V
VDD = 1.8V
VSS0.3
VDD+0.3
V
VDD = 5.5V
Common-Mode Rejection Ratio
CMRR
54
66
dB
VCM= -0.3V to VDD+0.3V, VDD = 5.5V
50
63
dB
VCM= VDD/2 to VDD+0.3V, VDD = 5.5V
54
65
dB
VCM= -0.3V to VDD/2, VDD = 5.5V
Common Mode Input Impedance
ZCM
—1013||4
||pF
Differential Input Impedance
ZDIFF
—1013||2
||pF
Note 1:
The input offset voltage is the center of the input-referred trip points. The input hysteresis is the difference between the
input-referred trip points.
2:
VHYST at different temperatures is estimated using VHYST (TA) = VHYST @ +25°C + (TA - 25°C) TC1 + (TA - 25°C)
2 TC
2.
3:
Limit the output current to Absolute Maximum Rating of 50 mA.
4:
The pull-up voltage for the open drain output VPULL_UP can be as high as the absolute maximum rating of 10.5V. In this
case, IOH_leak can be higher than 1 A (see Figure 2-30).
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