参数资料
型号: MCV18E-I/P
元件分类: 微控制器/微处理器
英文描述: 32-BIT, FLASH, 20 MHz, RISC MICROCONTROLLER, PDIP18
封装: 0.300 INCH, LEAD FREE, PLASTIC, DIP-18
文件页数: 91/108页
文件大小: 1509K
代理商: MCV18E-I/P
2009 Microchip Technology Inc.
DS41399A-page 83
MCV18E
10.2
DC Characteristics: MCV18E (Industrial)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C
≤ TA ≤ +85°C
Param
No.
Sym
Characteristic
Min
Typ
Max
Units
VDD
Conditions
VDD
Supply Voltage
D001
2.4
5.5
V
D010
IDD
Supply Current
—23
28
μA3.0
FOSC = 32 kHz
LP Oscillator mode
—45
63.7
μA5.0
D011
180
250
μA3.0
FOSC = 1 MHz
XT Oscillator mode
290
370
μA5.0
D012
350
470
μA3.0
FOSC = 4 MHz
XT Oscillator mode
600
780
μA5.0
D013
2.1
2.9
mA
4.5
FOSC = 20 MHz
HS Oscillator mode
2.5
3.3
mA
5.0
D020
IPD
Power-down Base Current
0.1
0.85
μA3.0
WDT, BOR and T1OSC:
disabled
—0.2
2.7
μA5.0
Peripheral Module Current(1)
D021
—2
3.5
μA3.0
WDT Current
—9
13.5
μA5.0
D022
37
50
μA
3.0
BOR Current
—40
55
μA4.5
—45
60
μA5.0
D025
—2.6
7.5
μA3.0
T1OSC Current
—3.0
9
μA5.0
Data in “Typ” column is at 5V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1:
The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral “
Δ” current can be determined by subtracting the base IDD or IPD
current from this limit.
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