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参数资料
| 型号： | MG200Q2YS60A |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 200 A, 1200 V, N-CHANNEL IGBT |
| 封装： | 2-123C1B, 11 PIN |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 代理商： | MG200Q2YS60A |
MG200Q2YS60A
2003-08-05
3
Maximum Ratings (Ta = 25°C)
Stage
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
1200
V
Gate-emitter voltage
VGES
±20
V
DC
IC
200
Collector current
1 ms
ICP
400
A
DC
IF
200
Forward current
1 ms
IFM
400
A
Inverter
Collector power dissipation (Tc
= 25°C)
PC
2000
W
Control voltage (OT)
VD
20
V
Fault input voltage
VFO
20
V
Control
Fault input current
IFO
20
mA
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
40~125
°C
Operation temperature range
Tope
20~100
°C
Isolation voltage
Visol
2500 (AC 1 min)
V
Module
Screw torque
3 (M5)
Nm
Electrical Characteristics (Tj = 25°C)
1. Inverter Stage
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
VGE = ±20 V, VCE = 0
+3/4mA
Gate leakage current
IGES
VGE = +10 V, VCE = 0
100
nA
Collector cut-off current
ICES
VCE = 1200 V, VGE = 0
1.0
mA
Gate-emitter cut-off voltage
VGE (off)
VCE = 5 V, IC = 200 mA
6.0
7.0
8.0
V
Tj
= 25°C
2.4
2.8
Collector-emitter saturation voltage
VCE (sat)
VGE = 15 V,
IC = 200 A
Tj
= 125°C
3.2
V
Input capacitance
Cies
VCE = 10 V, VGE = 0, f = 1 MHz
15000
pF
Turn-on delay time
td (on)
0.10
1.00
Turn-off time
toff
2.00
Switching time
Fall time
tf
0.50
Reverse recovery time
trr
VCC = 600 V, IC = 200 A
VGE = ±15 V, RG = 10
(Note 1)
0.50
s
Forward voltage
VF
IF = 200 A
2.4
2.8
V
Note 1: Switching time test circuit & timing chart
2. Control (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Fault output current
OC
VGE = 15 V
240
A
Over temperature
OT
100
125
°C
Fault output delay time
td (Fo)
VCC = 600 V, VGE = ±15 V
8
s
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