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参数资料
| 型号： | MG200Q2YS60A |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 200 A, 1200 V, N-CHANNEL IGBT |
| 封装： | 2-123C1B, 11 PIN |
| 文件页数： | 8/9页 |
| 文件大小： | 0K |
| 代理商： | MG200Q2YS60A |
MG200Q2YS60A
2003-08-05
8
Colle
ct
or
curr
ent
I C
(A
)
Colle
ct
or
curr
ent
I C
(A
)
Forward current IF (A)
Irr, trr – IF
Re
ver
se
r
eco
ver
yti
m
e
t rr
(n
s)
Re
ver
se
r
eco
ver
yc
urrent
I rr
(A)
Forward current IF (A)
Edsw – IF
Re
ver
se
r
eco
ver
yl
oss
E
dsw
(mJ)
Collector-emitter voltage VCE (V)
C – VCE
Ca
pacit
an
ce
C
(p
F
)
Collector-emitter voltage VCE (V)
Safe-operating area
Collector-emitter voltage VCE (V)
Reverse bias SOA
Pulse width tw (s)
Rth – tw
R
th
(j-c
)
(
°C
/W
)
10
0
50
100
150
200
100
1000
trr
Common emitter
VCC = 600 V
RG = 10
Tj = 25°C
VGE = ±15 V
Tj = 125°C
Irr
0.1
0
50
100
150
200
1
10
100
Common cathode
VCC = 600 V
RG = 10
Tj = 25°C
VGE = ±15 V
Tj = 125°C
100
0.01
0.1
1
10
100
1000
10000
100000
Cies
Coes
Cres
Common emitter
VGE = 0 V
f
= 1 MHz
Tj = 25°C
1
0
10
100
1000
400
800
1200
Tj <= 125°C
RG = 10
VGE = ±15 V
1
10
100
1000
10000
10
100
1000
IC max (pulsed)*
*: Single
nonrepetitive
pulse Tc
= 25°C
Curves must be
derated linearly
with increase in
temperature.
IC max (continuous)
1 ms
100
s
50
s
0.001
0.01
0.1
1
10
0.01
0.1
1
TC = 25°C
Diode stage
Transistor stage
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