参数资料
型号: MG200Q2YS60A
元件分类: IGBT 晶体管
英文描述: 200 A, 1200 V, N-CHANNEL IGBT
封装: 2-123C1B, 11 PIN
文件页数: 6/9页
文件大小: 0K
代理商: MG200Q2YS60A
MG200Q2YS60A
2003-08-05
6
Colle
ctor-emi
tter
vo
ltage
V
CE
(V
)
Colle
ctor-emi
tter
vo
ltage
V
CE
(V
)
Collector-emitter voltage VCE (V)
IC – VCE
Colle
ct
or
curr
ent
I C
(A
)
Collector-emitter voltage VCE (V)
IC – VCE
Colle
ct
or
curr
ent
I C
(A
)
Gate-emitter voltage VGE (V)
VCE – VGE
Colle
ctor-emi
tter
vo
ltage
V
CE
(V
)
Gate-emitter voltage VGE (V)
VCE – VGE
Gate-emitter voltage VGE (V)
VCE – VGE
Gate-emitter voltage VGE (V)
IC – VGE
Colle
ct
or
curr
ent
I C
(A
)
0
1
5
100
200
300
400
2
3
4
Common emitter
Tj = 25°C
VGE = 20 V
15 V
12 V
10 V
9 V
8 V
0
1
5
100
200
300
400
2
3
4
Common emitter
Tj = 125°C
VGE = 20 V
15 V
12 V
10 V
9 V
8 V
0
5
10
15
20
2
4
6
8
10
12
IC = 400 A
Common emitter
Tj = 25°C
200 A
100 A
0
5
10
15
20
2
4
6
8
10
12
IC = 400 A
Common emitter
Tj = 125°C
200 A
100 A
0
5
10
15
20
2
4
6
8
10
12
IC = 400 A
Common emitter
Tj = 40°C
200 A
100 A
0
2
4
6
8
10
12
100
200
300
400
Common emitter
VCE = 5 V
25°C
Tj = 125°C
40°C
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