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参数资料
| 型号： | MG50J1BS11 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 50 A, 600 V, N-CHANNEL IGBT |
| 封装： | 2-33F2A, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 161K |
| 代理商： | MG50J1BS11 |
MG50J1BS11
2003-04-11
1
TOSHIBA IGBT Module Silicon N Channel IGBT
MG50J1BS11
High Power Switching Applications
Motor Control Applications
l Enhancement-mode
l The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-emitter voltage
VCES
600
V
Gate-emitter voltage
VGES
±20
V
DC
IC
50
Collector current
1ms
ICP
100
A
Collector power dissipation
PC
150
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
40 to 125
°C
Isolation voltage
VIsol
2500
(AC 1 minute)
V
Screw torque (Terminal / mounting)
―
2 / 3
Nm
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-33F2A
相关PDF资料 |
PDF描述 |
|---|---|
| MG50J1ZS40 | 50 A, 600 V, N-CHANNEL IGBT |
| MG50J2YS1 | 50 A, 600 V, N-CHANNEL IGBT |
| MG50J2YS50 | 50 A, 600 V, N-CHANNEL IGBT |
| MG50J6ES50 | 50 A, 600 V, N-CHANNEL IGBT |
| MG50J6ES50 | 50 A, 600 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MG50J1ZS40 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) |
| MG50J2YS1 | 制造商:Toshiba America Electronic Components 功能描述: |
| MG50J2YS40 | 制造商:n/a 功能描述:IGBT Module 制造商:Toshiba America Electronic Components 功能描述: |
| MG50J2YS50 | 制造商:n/a 功能描述:IGBT Module |
| MG50J2YS9 | 制造商:Toshiba America Electronic Components 功能描述: |
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