参数资料
型号: MG50J1BS11
元件分类: IGBT 晶体管
英文描述: 50 A, 600 V, N-CHANNEL IGBT
封装: 2-33F2A, 3 PIN
文件页数: 2/5页
文件大小: 161K
代理商: MG50J1BS11
MG50J1BS11
2003-04-11
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGES
VGE = ±20V, VCE = 0
±500
nA
Collector cut-off current
ICES
VCE = 600V, VGE = 0
1.0
mA
Gate-emitter cut-off voltage
VGE (OFF)
IC = 50mA, VCE = 5V
3.0
6.0
V
Collector-emitter saturation voltage
VCE (sat)
IC = 50A, VGE = 15V
2.3
2.7
V
Input capacitance
Cies
VCE = 10V, VGE = 0, f = 1MHz
3500
pF
Rise time
tr
0.3
0.8
Turn-on time
ton
0.4
1.0
Fall time
tf
0.6
1.0
Switching time
Turn-off time
toff
1.0
1.6
s
Thermal resistance
Rth (j-c)
0.83
°C / W
相关PDF资料
PDF描述
MG50J1ZS40 50 A, 600 V, N-CHANNEL IGBT
MG50J2YS1 50 A, 600 V, N-CHANNEL IGBT
MG50J2YS50 50 A, 600 V, N-CHANNEL IGBT
MG50J6ES50 50 A, 600 V, N-CHANNEL IGBT
MG50J6ES50 50 A, 600 V, N-CHANNEL IGBT
相关代理商/技术参数
参数描述
MG50J1ZS40 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
MG50J2YS1 制造商:Toshiba America Electronic Components 功能描述:
MG50J2YS40 制造商:n/a 功能描述:IGBT Module 制造商:Toshiba America Electronic Components 功能描述:
MG50J2YS50 制造商:n/a 功能描述:IGBT Module
MG50J2YS9 制造商:Toshiba America Electronic Components 功能描述: