参数资料
型号: MG600Q1US61
元件分类: IGBT 晶体管
英文描述: 600 A, 1200 V, N-CHANNEL IGBT
封装: 2-109F1A, 4 PIN
文件页数: 5/8页
文件大小: 390K
代理商: MG600Q1US61
MG600Q1US61
2002-10-04
5
Sw
itc
hin
gtim
e
(n
s)
Sw
itc
hin
g
lo
ss
(
m
J)
Forward voltage VF (V)
IF – VF
Fo
rw
ar
dc
ur
ren
t
I F
(A
)
Gate
-em
itt
er
volt
age
V
GE
(V
)
Charge QG (nC)
VCE, VGE – QG
Co
lle
ct
or
-e
m
itte
r
vo
lta
ge
V
C
E
(V
)
Gate resistance RG ()
Switching time – RG
Sw
itc
hin
gtim
e
(n
s)
Gate resistance RG ()
Switching loss – RG
Collector current IC (A)
Switching time – IC
Collector current IC (A)
Switching loss – IC
Sw
itc
hin
g
lo
ss
(
m
J)
600
500
400
300
200
100
0
1
1.5
2
2.5
3
Common cathode
VGE = 0
125
Tj = 25°C
40
0.5
0
10
15
20
25
5
10
1000
100
VCC = 600 V
IC = 600 A
VGE = ±15 V
: Tj = 25°C
: Tj = 125°C
Eon
Eoff
0
10
15
20
25
5
100
10000
1000
VCC = 600 V, IC = 600 A
VGE = ±15 V
: Tj = 25°C
: Tj = 125°C
tr
td (on)
td (off)
tf
toff
ton
10
1000
10000
100
0
100
200
300
400
500
600
VCC = 600 V, RG = 2
VGE = ±15 V, Ls = 100 nH
: Tj = 25°C
: Tj = 125°C
tr
tf
td (off)
toff
ton
td (on)
1
100
1000
10
0
100
200
300
400
500
600
VCC = 600 V, RG = 2
VGE = ±15 V, Ls = 100 nH
: Tj = 25°C
: Tj = 125°C
Eoff
Eon
1000
0
800
600
400
200
0
1000
2000
3000
4000
5000
4
8
12
16
20
Common emitter
RL = 1
Tj = 25°C
VCE = 0 V
600
200
400
相关PDF资料
PDF描述
MG600Q1US65H 600 A, 1200 V, N-CHANNEL IGBT
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MG600Q2YS60A 600 A, 1200 V, N-CHANNEL IGBT
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