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参数资料
| 型号： | MJD148-2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 45 V, NPN, Si, POWER TRANSISTOR |
| 封装： | CASE 369A-13, DPAK-3 |
| 文件页数： | 1/8页 |
| 文件大小： | 73K |
| 代理商： | MJD148-2 |
Semiconductor Components Industries, LLC, 2002
May, 2002 – Rev. 1
1
Publication Order Number:
MJD148/D
MJD148
Preferred Device
NPN Silicon Power
Transistor
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Lead Formed Version Available in 16 mm Tape and Reel
(“T4” Suffix)
High Gain — 50 Min @ I
C = 2.0 Amps
Low Saturation Voltage — 0.5 V @ I
C = 2.0 Amps
High Current Gain–Bandwidth Product — f
T = 3.0 MHz Min @
IC = 250 mAdc
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
45
Vdc
Collector–Base Voltage
VCB
45
Vdc
Emitter–Base Voltage
VEB
5
Vdc
Collector Current — Continuous
Peak
IC
4
7
Adc
Base Current
IB
50
mAdc
Total Power Dissipation @ TC = 25°C
Derate above 25
°C
PD
20
0.16
Watts
W/
°C
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25
°C
PD
1.75
0.014
Watts
W/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RqJC
6.25
°C/W
Thermal Resistance, Junction to Ambient
(Note 1)
RqJA
71.4
°C/W
1. These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
2 AMPERES
1000 VOLTS
50 WATTS
POWER TRANSISTOR
MARKING
DIAGRAMS
Y
= Year
WW
= Work Week
MJD18002 = Device Code
Device
Package
Shipping
ORDERING INFORMATION
MJD148–2
DPAK
3000/Tape & Reel
DPAK
CASE 369A
STYLE 1
YWW
MJD
148
http://onsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD148T4 | 功能描述:两极晶体管 - BJT 4A 45V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD148T4G | 功能描述:两极晶体管 - BJT 4A 45V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD18002D2 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS Bipolar NPN Transistor |
| MJD18002D2T4 | 功能描述:两极晶体管 - BJT BIP NPN 2A 450V TR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD18002D2T4G | 功能描述:两极晶体管 - BJT BIP NPN 2A 450V TR F RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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