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参数资料
| 型号： | MJD148-2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 45 V, NPN, Si, POWER TRANSISTOR |
| 封装： | CASE 369A-13, DPAK-3 |
| 文件页数： | 5/8页 |
| 文件大小： | 73K |
| 代理商： | MJD148-2 |
MJD148
http://onsemi.com
5
10
1
Figure 7. Maximum Rated Forward Bias
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5
3
2
0.5
0.01
510
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
I C
,COLLECT
OR
CURRENT
(AMPS)
dc
500
ms
0.3
0.05
23
1ms
20
30
50 70
1
0.2
7
0.1
0.03
0.02
TC = 25°C SINGLE PULSE, D ≤ 0.1%
TJ = 150°C
5ms
FORWARD BIAS SAFE OPERATING AREA
INFORMATION
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 7 is based on TJ(pk) = 150°C; TC
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
v 150°C. TJ(pk) may be calculated from the data in
Figure 6. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
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| MJD18002D2T4 | 功能描述:两极晶体管 - BJT BIP NPN 2A 450V TR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD18002D2T4G | 功能描述:两极晶体管 - BJT BIP NPN 2A 450V TR F RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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