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参数资料
| 型号： | MJD148-2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 45 V, NPN, Si, POWER TRANSISTOR |
| 封装： | CASE 369A-13, DPAK-3 |
| 文件页数： | 8/8页 |
| 文件大小： | 73K |
| 代理商： | MJD148-2 |
MJD148
http://onsemi.com
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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Phone: 81–3–5740–2700
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For additional information, please contact your local
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MJD148/D
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相关PDF资料 |
PDF描述 |
|---|---|
| MJD148T4 | 4 A, 45 V, NPN, Si, POWER TRANSISTOR |
| MTD3055ET4 | 8 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD8N06ET4 | 8 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD4N20T4 | 4 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD4N20 | 4 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD148T4 | 功能描述:两极晶体管 - BJT 4A 45V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD148T4G | 功能描述:两极晶体管 - BJT 4A 45V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD18002D2 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS Bipolar NPN Transistor |
| MJD18002D2T4 | 功能描述:两极晶体管 - BJT BIP NPN 2A 450V TR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD18002D2T4G | 功能描述:两极晶体管 - BJT BIP NPN 2A 450V TR F RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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