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参数资料
| 型号： | MJD18002D2-1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封装： | CASE 369-07, DPAK-3 |
| 文件页数： | 10/16页 |
| 文件大小： | 142K |
| 代理商： | MJD18002D2-1 |
MJD18002D2
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation
Vl
IC = 0.4 Adc
IB1 =40mA
@ 1
s
@ TC = 25°C
VCE(dsat)
–
7.4
–
V
y
Voltage
Determinated 1
ms and
IB1 = 40 mA
VCC = 300 Vdc
@ 3
s
@ TC = 25°C
–
2.5
–
Determinated 1
ms and
3
ms respectively after
rising IB1 reaches 90%
IC = 1 Adc
IB1 =02A
@ 1
s
@ TC = 25°C
–
11.7
–
rising IB1 reaches 90%
of final IB1
IB1 = 0.2 A
VCC = 300 Vdc
@ 3
s
@ TC = 25°C
–
1.3
–
SWITCHING CHARACTERISTICS: Resistive Load (D.C.S. 10%, Pulse Width = 40
ms)
Turn–on Time
IC = 0.4 Adc, IB1 = 40 mAdc
IB2 = 200 mAdc
@ TC = 25°C
@ TC = 125°C
ton
–
225
375
350
–
ns
Turn–off Time
IB2 = 200 mAdc
VCC = 300 Vdc
@ TC = 25°C
@ TC = 125°C
toff
0.8
–
–
1.5
1.1
–
s
Turn–on Time
IC = 1.0 Adc, IB1 = 0.2 Adc
IB2 =05Adc
@ TC = 25°C
@ TC = 125°C
ton
–
100
94
150
–
ns
Turn–off Time
IB2 = 0.5 Adc
VCC = 300 Vdc
@ TC = 25°C
@ TC = 125°C
toff
0.95
–
–
1.5
1.25
–
s
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 H)
Fall Time
@ TC = 25°C
@ TC = 125°C
tf
–
130
120
175
–
ns
Storage Time
IC = 0.4 Adc
IB1 = 40 mAdc
IB2 = 0.2 Adc
@ TC = 25°C
@ TC = 125°C
ts
0.4
–
–
0.7
0.7
–
s
Cross–over Time
IB2 = 0.2 Adc
@ TC = 25°C
@ TC = 125°C
tc
–
110
100
175
–
ns
Fall Time
@ TC = 25°C
@ TC = 125°C
tf
–
130
140
175
–
ns
Storage Time
IC = 0.8 Adc
IB1 = 160 mAdc
IB2 = 160 mAdc
@ TC = 25°C
@ TC = 125°C
ts
2.1
–
–
3.0
2.4
–
s
Cross–over Time
IB2 = 160 mAdc
@ TC = 25°C
@ TC = 125°C
tc
–
275
350
350
–
ns
Fall Time
@ TC = 25°C
@ TC = 125°C
tf
–
100
150
–
ns
Storage Time
IC = 1.0 Adc
IB1 = 0.2 Adc
IB2 = 0.5 Adc
@ TC = 25°C
@ TC = 125°C
ts
–
1.05
1.45
1.2
–
s
Cross–over Time
IB2 = 0.5 Adc
@ TC = 25°C
@ TC = 125°C
tc
–
100
115
150
–
ns
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD18002D2T4 | 功能描述:两极晶体管 - BJT BIP NPN 2A 450V TR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD18002D2T4G | 功能描述:两极晶体管 - BJT BIP NPN 2A 450V TR F RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD200 | 功能描述:两极晶体管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD200_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Plastic Power Transistors |
| MJD200_11 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Plastic Power Transistors |
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