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参数资料
| 型号： | MJD18002D2-1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封装： | CASE 369-07, DPAK-3 |
| 文件页数： | 16/16页 |
| 文件大小： | 142K |
| 代理商： | MJD18002D2-1 |
MJD18002D2
http://onsemi.com
9
10
ms
Figure 26. tfr Measurement
Figure 27. Forward Bias Safe Operating Area
I F
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
100
10
0.01
I C
,COLLECT
OR
CURRENT
(AMPS)
Figure 28. Reverse Bias Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
2
0
1200
200
0
Figure 29. Forward Bias Power Derating
I C
,COLLECT
OR
CURRENT
(AMPS)
TC, CASE TEMPERATURE (°C)
40
20
POWER
DERA
TING
F
ACT
OR
0
0.1
10
160
0.2
0.4
0.6
1
0.5
1
2.5
400
800
1000
0.8
60
100
80
120
140
V
F
1000
600
1.5
10% IF
VFRM
0.1 VF
tfr
VFR (1.1 VF) Unless
Otherwise Specified
Second Breakdown Derating
Thermal Derating
EXTENDED
SOA
DC
50
ms
1
ms
5 ms
1 ms
TC = 125°C
Gain = 4
LC = 500 mH
VBE = 0 V
VBE(off) = –1.5 V
VBE(off) = –5 V
02
4
6
8
10
12
8
6
4
10
2
0
VF
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC–VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of Figure 27 is
based on TC = 25°C; TJ(pk) is variable depending on power
level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when TC > 25°C. Second
Breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on
Figure 27 may be found at any case temperature by using the
appropriate curve on Figure 29.
TJ(pk) may be calculated from the data in Figure 30. At any
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown. For inductive loads, high
voltage and current must be sustained simultaneously during
turn–off with the base to emitter junction reverse biased. The
safe level is specified as a reverse biased safe operating area
(Figure 28). This rating is verified under clamped conditions
so that the device is never subjected to an avalanche mode.
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| MJD18002D2T4 | 功能描述:两极晶体管 - BJT BIP NPN 2A 450V TR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD18002D2T4G | 功能描述:两极晶体管 - BJT BIP NPN 2A 450V TR F RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD200 | 功能描述:两极晶体管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD200_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Plastic Power Transistors |
| MJD200_11 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Plastic Power Transistors |
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