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参数资料
| 型号： | MJD200TF |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 25 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| 封装： | DPAK-3 |
| 文件页数： | 6/6页 |
| 文件大小： | 75K |
| 代理商： | MJD200TF |
Product Folder - Fairchild P/N MJD200 - NPN Epitaxial Silicon Transistor
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MJD200
NPN Epitaxial Silicon Transistor
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Contents
Features
D-PAK for Surface Mount Applications
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High DC Current Gain
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Built-in a Damper Diode at E-C
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Lead Formed for Surface Mount
Applications (No Suffix)
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Straight Lead (I-PAK, "-I" Suffix)
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Datasheet
This pagePrint version
Product status/pricing/packaging
Product
Product status
Pricing*
Package type
Leads
Packing method
MJD200TF
Full Production
$0.28
TO-252(DPAK)
2
TAPE REEL
* 1,000 piece Budgetary Pricing
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file:///C|/shj/MJD200.html [Jul-26-2002 3:11:16 PM]
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相关PDF资料 |
PDF描述 |
|---|---|
| MJD210-1 | 5 A, 25 V, PNP, Si, POWER TRANSISTOR |
| MJD200-1 | 5 A, 25 V, NPN, Si, POWER TRANSISTOR |
| MJD210I | 5 A, 25 V, PNP, Si, POWER TRANSISTOR |
| MJD2955-I | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
| MJD29C-1 | 1 A, 100 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD210 | 功能描述:两极晶体管 - BJT 5A 25V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD210_10 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS |
| MJD210-1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS |
| MJD210G | 功能描述:两极晶体管 - BJT 5A 25V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD210G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
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