- 您现在的位置：买卖IC网 > PDF目录97605 > MJD3055 (STMICROELECTRONICS) 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-252 PDF资料下载
参数资料
| 型号： | MJD3055 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| 封装： | DPAK-3 |
| 文件页数： | 6/6页 |
| 文件大小： | 188K |
| 代理商： | MJD3055 |
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
2002 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
MJD2955 / MJD3055
6/6
相关PDF资料 |
PDF描述 |
|---|---|
| MJD2955T4 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-252AA |
| MJD29C-I | 1 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD29-I | 1 A, 40 V, NPN, Si, POWER TRANSISTOR |
| MJD32B | 3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| MJD31B | 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-252 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD3055-1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS |
| MJD3055G | 功能描述:两极晶体管 - BJT 10A 60V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD3055T4 | 功能描述:两极晶体管 - BJT NPN Gen Pur Switch RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD3055T4G | 功能描述:两极晶体管 - BJT 10A 60V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD3055TF | 功能描述:两极晶体管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。