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参数资料
| 型号： | MJD31CT4 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封装： | DPAK-3 |
| 文件页数： | 4/6页 |
| 文件大小： | 150K |
| 代理商： | MJD31CT4 |
MJD31C MJD32C
4
Motorola Bipolar Power Transistor Device Data
V
CE
,COLLECT
OR–EMITTER
VOL
TAGE
(VOL
TS)
5
IB, BASE CURRENT (mA)
10
20
1.2
0.4
0
50
100
200
500
2
0.8
TJ = 25°C
1.6
2
1
IC = 0.3 A
1000
Figure 7. Collector Saturation Region
300
VR, REVERSE VOLTAGE (VOLTS)
CAP
ACIT
ANCE
(pF)
Ceb
0.1
200
100
0.5
1
10
40
TJ = + 25°C
t, TIME (ms)
1
0.01
1 k
0.3
0.2
0.07
r(t)
,TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
R
θJC(t) = r(t) RθJC
R
θJC = 8.33°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
Figure 8. Capacitance
0.7
D = 0.5
Figure 9. Thermal Response
1 A
3 A
70
50
30
0.2 0.3
2
3
5
20 30
Ccb
0.5
0.1
0.05
0.03
0.02
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2
3
5
10
20
30
50
100
200 300
500
0.2
0.1
0.05
0.01
I C
,COLLECT
OR
CURRENT
(AMPS)
10
1.5
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.01
3
150
1
0.3
0.2
3
0.05
0.03
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
5
7
20
70
10
TC = 25°C SINGLE PULSE
TJ = 150°C
100
s
1ms
dc
2
0.02
0.1
0.5
2
5
Figure 10. Active Region Safe Operating Area
50
30
100
CURVES APPLY BELOW RATED VCEO
500
s
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 10 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in Fig-
ure 9. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
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