参数资料
型号: MJD31CT4
厂商: MOTOROLA INC
元件分类: 功率晶体管
英文描述: 3 A, 100 V, NPN, Si, POWER TRANSISTOR
封装: DPAK-3
文件页数: 6/6页
文件大小: 150K
代理商: MJD31CT4
MJD31C MJD32C
6
Motorola Bipolar Power Transistor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
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MJD31C/D
相关PDF资料
PDF描述
MJD49T4 1 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-252AA
MJE13002 1.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-225AA
MJE13003B-AP 1500 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MJE13003B-BP 1500 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MJE13004 4 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220
相关代理商/技术参数
参数描述
MJD31CT4-A 功能描述:两极晶体管 - BJT LO VLT NPN PWR TRANS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJD31CT4G 功能描述:两极晶体管 - BJT 3A 100V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJD31CT4G-CUT TAPE 制造商:ON 功能描述:MJD Series 100 V 3 A NPN Complementary Power Transistor - TO-252
MJD31CTF 功能描述:两极晶体管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJD31CTF_NBDD001 功能描述:两极晶体管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2