- 您现在的位置：买卖IC网 > PDF目录182422 > MJD42C-1 (ON SEMICONDUCTOR) 6 A, 100 V, PNP, Si, POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | MJD42C-1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 6 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, CASE 369D-01, DPAK-3 |
| 文件页数： | 4/6页 |
| 文件大小： | 170K |
| 代理商： | MJD42C-1 |
MJD41C (NPN) MJD42C (PNP)
http://onsemi.com
4
C,
CAP
ACIT
ANCE
(pF)
V
CE
,COLLECT
OR-EMITTER
VOL
TAGE
(VOL
TS)
t, TIME (ms)
0.01
0.05
1
2
5
10
20
50
100
200
500
0.1
0.5
0.2
1000
0.03
0.3
3
30
300
0.02
2.5 A
Figure 7. Collector Saturation Region
IB, BASE CURRENT (mA)
1.2
0.4
0
10
2
0.8
TJ = 25°C
1.6
IC = 1 A
Figure 8. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Cob
0.5
50
2
5
20
50
1
0.2
0.1
0.05
r(t)
,EFFECTIVE
TRANSIENT
THERMAL
RqJC(t) = r(t) RqJC
RqJC = 6.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
SINGLE PULSE
RESIST
ANCE
(NORMALIZED)
Figure 9. Thermal Response
0.5
D = 0.5
5 A
1000
500
300
200
100
50
30
20
300
30
70
100
200
1
3
10
30
0.05
0.3
0.7
0.07
0.03
0.02
0.1
0.02
0.01
TJ = 25°C
Cib
I C
,COLLECT
OR
CURRENT
(AMP)
10
70
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.01
100
1
0.3
3
0.1
0.03
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
Figure 10. Maximum Forward Bias
Safe Operating Area
TC = 25°C SINGLE PULSE
TJ = 150°C
dc
0.5
2
5
1ms
MJD41C, 42C
50
30
20
10
7
5
3
2
1
0.05
100
ms
CURVES APPLY BELOW RATED VCEO
5ms
500
ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
TJ(pk) v 150_C. TJ(pk) may be calculated from the data in
Figure 9. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
相关PDF资料 |
PDF描述 |
|---|---|
| MJD44E3-1 | 10 A, 80 V, NPN, Si, POWER TRANSISTOR |
| MJD44H11T4-A | 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-252AA |
| MJD45H11T4-A | 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252AA |
| MJD45H11-1 | 8 A, 80 V, PNP, Si, POWER TRANSISTOR |
| MJD44H11-1 | 8 A, 80 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD42C1G | 功能描述:两极晶体管 - BJT 6A 100V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD42CG | 功能描述:两极晶体管 - BJT 6A 100V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD42CRL | 功能描述:两极晶体管 - BJT 6A 100V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD42CRLG | 功能描述:两极晶体管 - BJT 6A 100V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD42CT4 | 功能描述:两极晶体管 - BJT 6A 100V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。