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参数资料
| 型号： | MJF18004 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | POWER TRANSISTOR |
| 中文描述： | 5 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | CASE 221D-03, ISOLATED TO-220, FULL PACK-3 |
| 文件页数： | 5/10页 |
| 文件大小： | 422K |
| 代理商： | MJF18004 |
5
Motorola Bipolar Power Transistor Device Data
Figure 7. Resistive Switching, ton
Figure 8. Resistive Switching, toff
IC, COLLECTOR CURRENT (AMPS)
IC COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
0
1800
IC, COLLECTOR CURRENT (AMPS)
t
Figure 9. Inductive Storage Time, tsi
Figure 10. Inductive Storage Time, tsi(hFE)
Figure 11. Inductive Switching, tc & tfi, IC/IB = 5
Figure 12. Inductive Switching, tc & tfi, IC/IB = 10
1000
4
2000
0
3500
3
hFE, FORCED GAIN
6
300
50
0
IC, COLLECTOR CURRENT (AMPS)
4
5
150
0
2000
0
12
15
250
100
2
2
5
ts
200
150
100
400
4
2
500
1000
1500
2500
t
t
0
3
4
1000
1500
2500
9
3500
500
1000
1500
2000
2500
0
2
3
t
4
5
0
2
3
t
1
3
5
0
3
5
500
3000
4
5
7
8
10
11
13
14
250
50
3000
1
1
1
1
3000
200
600
800
1200
1400
1600
0
200
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
IB(off) = IC/2
VCC = 300 V
PW = 20
μ
s
IC/IB = 10
IC/IB = 5
IC/IB = 5
IC/IB = 10
TJ = 25
°
C
TJ = 125
°
C
IB(off) = IC/2
VCC = 300 V
PW = 20
μ
s
IC/IB = 5
IC/IB = 10
TJ = 25
°
C
TJ = 125
°
C
TJ = 25
°
C
TJ = 125
°
C
VZ = 300 V
VCC = 15 V
IB(off) = IC/2
LC = 200
μ
H
TJ = 25
°
C
TJ = 125
°
C
VZ = 300 V
VCC = 15 V
IB(off) = IC/2
LC = 200
μ
H
IC = 2 A
IC = 1 A
TJ = 25
°
C
TJ = 125
°
C
VZ = 300 V
VCC = 15 V
IB(off) = IC/2
LC = 200
μ
H
tfi
tc
TJ = 25
°
C
TJ = 125
°
C
VZ = 300 V
VCC = 15 V
IB(off) = IC/2
LC = 200
μ
H
tc
tfi
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