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参数资料
| 型号： | MJF18004 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | POWER TRANSISTOR |
| 中文描述： | 5 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | CASE 221D-03, ISOLATED TO-220, FULL PACK-3 |
| 文件页数： | 6/10页 |
| 文件大小： | 422K |
| 代理商： | MJF18004 |
6
Motorola Bipolar Power Transistor Device Data
0.1
Figure 13. Inductive Fall Time
Figure 14. Inductive Crossover Time
Figure 15. Forward Bias Safe Operating Area
P
Figure 16. Reverse Bias Safe
Operating Area
Figure 17. Forward Bias Power Derating
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC–VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate. The data of Figure 15 is based
on TC = 25
°
C; TJ(pk) is variable depending on power level.
Second breakdown pulse limits are valid for duty cycles to
10% but must be derated when TC
≥
25
°
C. Second
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on Figure
15 may be found at any case temperature by using the
appropriate curve on Figure 17. TJ(pk) may be calculated
from the data in Figures 20 and 21. At any case tempera-
tures, thermal limitations will reduce the power that can be
handled to values less the limitations imposed by second
breakdown. For inductive loads, high voltage and current
must be sustained simultaneously during turn–off with the
base–to–emitter junction reverse biased. The safe level is
specified as a reverse–biased safe operating area (Figure
16). This rating is verified under clamped conditions so that
the device is never subjected to an avalanche mode.
hFE, FORCED GAIN
hFE, FORCED GAIN
t
t
I
I
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
TC, CASE TEMPERATURE (
°
C)
GUARANTEED SAFE OPERATING AREA INFORMATION
3
6
12
15
9
70
4
5
7
8
10
11
13
14
3
6
12
15
50
4
5
13
14
10
1000
100
0.01
400
600
1100
900
0
500
800
700
1000
80
90
100
110
120
130
140
150
160
200
300
150
100
250
1.0
10
100
1.0
2.0
3.0
4.0
5.0
6.0
9
7
8
10
11
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
1.0
0.8
0.6
0.4
0.2
0
160
140
120
100
80
60
40
20
IC = 2 A
IC = 1 A
TJ = 25
°
C
TJ = 125
°
C
VZ = 300 V
VCC = 15 V
IB(off) = IC/2
LC = 200
μ
H
VZ = 300 V
VCC = 15 V
IB(off) = IC/2
LC = 200
μ
H
IC = 1 A
IC = 2 A
TJ = 25
°
C
TJ = 125
°
C
1
μ
s
10
μ
s
50
μ
s
1 ms
5 ms
DC (MJE18004)
DC (MJF18004)
Extended
SOA
TC
≤
125
°
C
IC/IB
≥
4
LC = 500
μ
H
VBE(off) =
0 V
–1.5 V
–5 V
SECOND
BREAKDOWN
DERATING
THERMAL
DERATING
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| MJF18008G | 功能描述:两极晶体管 - BJT 8A 450V 45W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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