参数资料
型号: MMBF0201NLT3
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 300 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封装: PLASTIC, CASE 318-08, 3 PIN
文件页数: 34/34页
文件大小: 353K
代理商: MMBF0201NLT3
Packaging Specifications
6–6
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL
H2A
H
F1
F2
P2
P1
P
D
W
W1
L1
W2
H2B
T1
T
T2
H4 H5
H1
Figure 1. Device Positioning on Tape
L
Specification
Inches
Millimeter
Symbol
Item
Min
Max
Min
Max
D
Tape Feedhole Diameter
0.1496
0.1653
3.8
4.2
D2
Component Lead Thickness Dimension
0.015
0.020
0.38
0.51
F1, F2
Component Lead Pitch
0.0945
0.110
2.4
2.8
H
Bottom of Component to Seating Plane
.059
.156
1.5
4.0
H1
Feedhole Location
0.3346
0.3741
8.5
9.5
H2A
Deflection Left or Right
0
0.039
0
1.0
H2B
Deflection Front or Rear
0
0.051
0
1.0
H4
Feedhole to Bottom of Component
0.7086
0.768
18
19.5
H5
Feedhole to Seating Plane
0.610
0.649
15.5
16.5
L
Defective Unit Clipped Dimension
0.3346
0.433
8.5
11
L1
Lead Wire Enclosure
0.09842
2.5
P
Feedhole Pitch
0.4921
0.5079
12.5
12.9
P1
Feedhole Center to Center Lead
0.2342
0.2658
5.95
6.75
P2
First Lead Spacing Dimension
0.1397
0.1556
3.55
3.95
T
Adhesive Tape Thickness
0.06
0.08
0.15
0.20
T1
Overall Taped Package Thickness
0.0567
1.44
T2
Carrier Strip Thickness
0.014
0.027
0.35
0.65
W
Carrier Strip Width
0.6889
0.7481
17.5
19
W1
Adhesive Tape Width
0.2165
0.2841
5.5
6.3
W2
Adhesive Tape Position
.0059
0.01968
.15
0.5
NOTES:
1. Maximum alignment deviation between leads not to be greater than 0.2 mm.
2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.
3. Component lead to tape adhesion must meet the pull test requirements established in Figures 5, 6 and 7.
4. Maximum non–cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.
5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.
6. No more than 1 consecutive missing component is permitted.
7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.
8. Splices will not interfere with the sprocket feed holes.
相关PDF资料
PDF描述
MMBF0202PLT3 300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
MMBF170D87Z 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
MMBF2201NT3 300 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MMBF2202PT3 300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
MMBF5484LT3 VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB
相关代理商/技术参数
参数描述
MMBF0202PLT1 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 300 mAmps, 20 Volts
MMBF102 功能描述:射频JFET晶体管 N-CHANNEL RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS(最大值/最小值): 电阻汲极/源极 RDS(导通): 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流(Vgs=0 时的 Idss):25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel
MMBF102LT1 制造商:Motorola Inc 功能描述:
MMBF1374T1 制造商:Rochester Electronics LLC 功能描述:- Bulk
MMBF170 功能描述:MOSFET N-Ch Enhance RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube